NGTB30N135IHRWG

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The NGTB30N135IHRWG is a single IGBT from NXP Semiconductor, intended for use in switching or amplifier applications. It can be used to control power in high-voltage or high-current applications in industrial, communications, automotive, and consumer electronics. The device can handle voltages up to 30 V and currents up to 13 A in what is known as a "gate turn-off" mode.

An IGBT is an insulated-gate bipolar transistor (IGBT), which is a type of power semiconductor. It is a combination of a MOSFET and a bjt, and offers some of the advantages of both. The gate-turn-off feature is an important distinction, as it allows the IGBT to be used in applications that require the switching of large amounts of power. This makes it useful for high-power motor control, power conditioning, motor drive, switching and power supply applications.

The NGTB30N135IHRWG is a single IGBT, meaning that it contains only one transistor. It has a collector-emitter voltage rating of 30 V, a collector-emitter peak current of 13 A, and a maximum gate-emitter voltage of 20 V. It is designed for surface-mount applications and has a range of features that allow for efficient operation and safe operation.

The device has a few distinguishing features which make it stand out from other IGBTs. Firstly, it has a small package size, making it suitable for use in space-constrained applications. Additionally, it has an integrated over-temperature protection feature and a fast turn-off voltage of approximately 50 V.

The NGTB30N135IHRWG can be used in applications that require fast switching, such as motor drives, power factor correction, and switching power supplies. It is also suitable for use in motor control, power conditioning, and power supply applications.

The working principle of this device is quite straightforward. When a voltage is applied to the gate of the IGBT, current can pass from the source to the drain via the channel. This current is then used to turn on or off power to devices connected to the source and drain. The voltage applied to the gate also determines the amount of current that can flow through the device.

In summary, the NGTB30N135IHRWG is a single IGBT from NXP Semiconductor, suited to switching and amplifier applications. Its features make it suitable for use in high-voltage or high-current applications in industrial, communications, automotive, and consumer electronics. It has a collector-emitter voltage rating of 30 V, a collector-emitter peak current of 13 A, and a maximum gate-emitter voltage of 20 V. When a voltage is applied to the gate of the IGBT, current passes between the source and drain, enabling the device to power on or off devices connected to the source and drain.

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