NGTB45N60S2WG Allicdata Electronics

NGTB45N60S2WG Discrete Semiconductor Products

Allicdata Part #:

NGTB45N60S2WGOS-ND

Manufacturer Part#:

NGTB45N60S2WG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 45A 600V TO-247
More Detail: IGBT Trench 600V 90A 300W Through Hole TO-247-3
DataSheet: NGTB45N60S2WG datasheetNGTB45N60S2WG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 300W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 498ns
Test Condition: 400V, 45A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/151ns
Gate Charge: 135nC
Input Type: Standard
Switching Energy: 360µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 45A
Current - Collector Pulsed (Icm): 180A
Current - Collector (Ic) (Max): 90A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Transistors - IGBTs - Single

The NGTB45N60S2WG transistor is a single insulated-gate bipolar transistors (IGBTs). It is designed to provide a high temperature, high frequency, high-voltage switching performance. With its advanced design and superior process, it is suitable for a wide range of high current and high voltage applications.

Application Field

The NGTB45N60S2WG provides excellent performance in high power switching applications such as motor drives and power converters. It can also be used in applications such as solar inverters and high-end industrial automation control. Also in industrial environments, the NGTB45N60S2WG transistor offers low noise and high temperature performance.

Working Principle

IGBTs are unique transistors that offer a combination of both bipolar and field-effect structures. This hybrid structure allows them to handle high power and current levels in low voltage applications. The NGTB45N60S2WG IGBT transistor works by controlling the current flow between the collector-emitter path, the gate-emitter path and the gate-collector path. This allows for efficient and precise control of the collector-emitter current.

The NGTB45N60S2WG works on a zero voltage switching principle, which means it can switch to an "off" state at zero volts across its source and drain. This allows the transistor to turn off faster, eliminating the need for additional help from a snubber or series resistor. As this transistor utilizes advanced fabrication technologies, it can feature lower leakage current than any other transistors in the same family.

Conclusion

The NGTB45N60S2WG transistor is a single IGBT designed for high performance in a variety of high-power switching applications. It is capable of switching to an "off" state at zero volts, eliminating the need for additional help from a snubber or series resistor. Moreover, its advanced design and improved process enable lower leakage current than other transistors in the same family. Therefore, the NGTB45N60S2WG is a useful and powerful choice for many industrial automation and power switching applications.

The specific data is subject to PDF, and the above content is for reference

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