NGTB25N120FL2WG Discrete Semiconductor Products

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The NGTB25N120FL2WG is a high-voltage, high-current IGBT device that is designed and manufactured by ON Semiconductor. It is part of the N-series of IGBTs, which provides low conduction and switching losses in a range of applications for medium to high-power applications. This article will discuss the application fields and working principle of the NGTB25N120FL2WG, and will classify it as a Single IGBT.

The NGTB25N120FL2WG is primarily used in power converter and inverter applications, where it is used to provide isolation between the high-voltage AC and the low-voltage DC supplies. This device has a VCE(sat) of 1.7V and an off-state blocking voltage of 1200 V, meaning that it can handle voltages up to 1200 V. This IGBT has a maximum avalanche current of 20 A and a maximum collector-emitter voltage of 25 V, making it suitable for applications such as variable speed motor drives, AC and DC load switching, UPS systems, inverters and solar and wind power applications.

The operating principle of the NGTB25N120FL2WG is that of a normal IGBT. When a positive voltage (VGE) is applied to the Gate terminal, the device turns ON, and a conducting channel is created between the Collector and Emitter terminals. The device turns OFF when the Gate voltage is reversed, or when the Collector voltage is reduced to 0V. This allows the device to be used to control the flow of high-voltage current with either AC or DC voltages.

The NGTB25N120FL2WG is a Single IGBT, meaning that it can only be used in a single configuration at a time. The device is designed to be used in a single-phase configuration, meaning that it can be used in applications such as AC and DC drives and solar inverters, but it is not suitable for high-power applications that require more than one phase of operation. The device can be used in full bridge topologies as long as the application does not require more than one phase to be active.

In summary, the NGTB25N120FL2WG is a high-voltage, high-current IGBT device that is designed and manufactured by ON Semiconductor. It is primarily used in power converter and inverter applications and has a VCE(sat) of 1.7V and an off-state blocking voltage of 1200 V. The operating principle of the device follows that of a normal IGBT, and it can only be used in single-phase applications. For these reasons, the NGTB25N120FL2WG can be classified as a Single IGBT.

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