NGTB40N135IHRWG Allicdata Electronics

NGTB40N135IHRWG Discrete Semiconductor Products

Allicdata Part #:

NGTB40N135IHRWGOS-ND

Manufacturer Part#:

NGTB40N135IHRWG

Price: $ 3.89
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 1350V 80A 394W TO247
More Detail: IGBT Trench Field Stop 1350V 80A 394W Through Hole...
DataSheet: NGTB40N135IHRWG datasheetNGTB40N135IHRWG Datasheet/PDF
Quantity: 90
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 3.89000
10 +: $ 3.77330
100 +: $ 3.69550
1000 +: $ 3.61770
10000 +: $ 3.50100
Stock 90Can Ship Immediately
$ 3.89
Specifications
Power - Max: 394W
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Test Condition: 600V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/250ns
Gate Charge: 234nC
Input Type: Standard
Switching Energy: 1.3mJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 40A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 80A
Voltage - Collector Emitter Breakdown (Max): 1350V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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An IGBT is a type of insulated gate bipolar transistor (IGBT) or insulated gate field effect transistor (IGFET). These devices are widely used in power electronic controllers, such as inverters, motor drives, and motor controllers. An IGBT is a device composed of two semiconductors, typically silicon, which are connected in series and fed with an external voltage. The IGBT is constructed from a transistor, usually an N-channel MOSFET, and an insulated gate bipolar transistor (IGBT) in a single device. This integration increases power efficiency, reduces the required board space, and reduces cost.

The NGTB40N135IHRWG is a single IGBT module specially developed for applications such as motor drives and power supplies. It features high efficiency, high switching frequency, and extended ambient temperature range. The features of the NGTB40N135IHRWG make it suitable for applications such as motor drives and power supplies. This is because the IGBT offers a more efficient switching characteristic than a bipolar transistor and can also handle higher temperatures, which translates into a longer device life.

The NGTB40N135IHRWG also has a wide variety of protection features, making it a reliable and rugged device. It has built-in over-temperature, over-voltage and under-voltage protection, along with an integrated gate driver circuit that provides voltage and current sensing in the power stage. The device also has EMI protection to reduce radiated noise. The gate and emitter pins of the device can withstand up to 20V reverse polarity. The device has a current sharing capability, allowing it to be used in multiple parallel configurations.

The working principle of an IGBT is based on the principle of a MOSFETs. This type of transistor has two modes of operation, the “on” state and the “off” state. When an IGBT is in the “on” state, a voltage applied to the gate will cause current to flow through the device, turning it on. When an IGBT is in the “off” state, no current will flow, and the device will be off. The gate voltage is used to control the current flow through the device.

The NGTB40N135IHRWG is well-suited for applications such as motor drives and power supplies due to its combination of high performance and reliable operation. It can handle high switching frequencies and extended ambient temperatures, making it the perfect device for these types of applications. Furthermore, the built-in protection features make it a reliable and rugged device for use in a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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