NGTB50N65FL2WG Allicdata Electronics
Allicdata Part #:

NGTB50N65FL2WG-ND

Manufacturer Part#:

NGTB50N65FL2WG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 50A TO247
More Detail: IGBT Trench Field Stop 650V 100A 417W Through Hole...
DataSheet: NGTB50N65FL2WG datasheetNGTB50N65FL2WG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Stock 1000Can Ship Immediately
Specifications
Power - Max: 417W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 94ns
Test Condition: 400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C: 100ns/237ns
Gate Charge: 220nC
Input Type: Standard
Switching Energy: 1.5mJ (on), 460µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 50A
Current - Collector Pulsed (Icm): 200A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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Transistors – IGBTs – Single

The NGTB50N65FL2WG is a type of transistor specifically defined as a power integrated gate-commutated thyristor (IGBT). In the field of semiconductor production, IGBTs have become increasingly popular for their high ratings for current and voltage in comparison to other transistor types. Their design is such that they create an easy manner in which current can be switched between a high and low state depending on the application.

The NGTB50N65FL2WG has a collector-emiter voltage of 650V, with their continuous collector current rating standing at 50A. Additionally, they have a Gate-Emitter Voltage of 20V minimum and 20.5V maximum. They also maintain a industry standard minimum operating temperature of -50°C and maximum of 150°C.

The working principle behind modern IGBTs such as the NGTB50N65FL2WG is very similar to that of bipolar junction transistors. The primary defining feature of an IGBT is its resemblance to a MOSFET, due to its gate voltage dependence. The easy control of current for IGBTs occurs via a gate-to-emitter voltage and results in the transistor entering either a low or high voltage resistive state.

In general, the NGTB50N65FL2WG is a silicon-based transistor with a wide array of applications. Many of its uses are consumer or industrial based, and this particular IGBT effectively forms a bridge between the supply and consumer of electricity. Depending on the current flowing through the consumer, such as a motor for instance, voltage control is facilitated by the use of an IGBT allowing for the moderate control of current and voltage. Additionally, the NGTB50N65FL2WG may be used in applications such as electric welding, DC-DC converters, Vehicle electronics, lighting, Uninterruptible Power Systems (UPS), inverters and electric home appliances.

Due to their ability to switch rapidly and efficiently, IGBTs such as the NGTB50N65FL2WG help to reduce the amount of energy needed to power a system in comparison to other transistor types. Moreover, when coupled with power capacitor systems, the NGTB50N65FL2WG can help to create a more reliable and cost-effective electrical networks.

In conclusion, the NGTB50N65FL2WG is an IGBT transistor offering improved current and voltage ratings in comparison to other transistor types. The working principle behind IGBTs is similar to that of bipolar junction transistors and offers an easy manner in which current can be switched between a low and high state. Popular applications for the NGTB50N65FL2WG include electric welding, DC-DC converters, lighting, and electric home appliances. Additionally, with the IGBT offering greater efficiency in terms of electrical energy, customers will benefit from the reduced energy costs provided by the NGTB50N65FL2WG.

The specific data is subject to PDF, and the above content is for reference

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