NGTB15N135IHRWG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB15N135IHRWG-ND |
Manufacturer Part#: |
NGTB15N135IHRWG |
Price: | $ 2.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1350V 15A TO247-3 |
More Detail: | IGBT Trench Field Stop 1350V 30A 357W Through Hole... |
DataSheet: | NGTB15N135IHRWG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
120 +: | $ 1.88328 |
Power - Max: | 357W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -40°C ~ 175°C (TJ) |
Test Condition: | 600V, 15A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | -/170ns |
Gate Charge: | 156nC |
Input Type: | Standard |
Switching Energy: | 420µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.65V @ 15V, 15A |
Current - Collector Pulsed (Icm): | 60A |
Current - Collector (Ic) (Max): | 30A |
Voltage - Collector Emitter Breakdown (Max): | 1350V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Integrated gate-turn-off transistors (IGBT) are special transistors that combine the best of both bipolar junction transistors (BJT) and metal-oxide field-effect transistors (MOSFET). By combining these two devices, IGBTs provide a power rating higher than MOSFETs and are easier to use than BJT devices. One type of IGBT, the NGBT15N135IHRWG, is used in many applications.
Power Applications
In power applications, the NGBT15N135IHRWG IGBT can be used to control larger currents than traditional MOSFETs. It is often used to switch heavy loads such as motors and solenoids. The IGBT also has rise and fall times that are faster than those of BJTs and allows for higher frequency switching. This makes the NGBT15N135IHRWG a popular choice for power conversion applications such as switch-mode power supplies, inverters, and motor drive controllers.
High-Speed Applications
The higher frequency switching capability of the NGBT15N135IHRWG makes it well-suited for high-speed applications. It can be used in high-frequency switching such as in radio frequency (RF) applications and power amplifiers. Additionally, the device can handle higher switching frequencies than other IGBTs, making it ideal for applications such as welding and electroplating for which faster switching is necessary.
Working Principle
The NGBT15N135IHRWG employs a gate-controlled turn-off transistor that allows for the device to be switched on and off very quickly and efficiently. By providing a positive gate voltage, a control current is allowed to pass through the gate and into the transistor. This causes the device to switch from its ON state to its OFF state quickly and in a controlled manner.
The NGBT15N135IHRWG also utilizes an anti-parallel diode which acts as a protective device that conducts current when the transistor is in its OFF state. This helps to reduce losses due to parasitic inductances and reduces the stresses on the transistor.
Conclusion
The NGBT15N135IHRWG IGBT is a versatile device that can be used in a variety of power and high-frequency applications. Its fast switching capability, combined with its anti-parallel diode, allow it to switch heavy loads quickly and efficiently while reducing losses due to inductances. This combination makes the NGBT15N135IHRWG a favorite in the power electronics industry.
The specific data is subject to PDF, and the above content is for reference
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NGTB75N60FL2WG | ON Semicondu... | 6.07 $ | 1000 | IGBT 600V 75A TO247IGBT T... |
NGTB30N120FL2WG | ON Semicondu... | -- | 1000 | IGBT 1200V 60A 452W TO247... |
NGTB30N120L2WG | ON Semicondu... | 7.01 $ | 1000 | IGBT 1200V 60A 534W TO247... |
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NGTB20N135IHRWG | ON Semicondu... | -- | 129 | IGBT 1350V 40A 394W TO247... |
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