Allicdata Part #: | NGTB75N60SWGOS-ND |
Manufacturer Part#: |
NGTB75N60SWG |
Price: | $ 4.51 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 75A 600V TO-247 |
More Detail: | IGBT 600V 100A 595W Through Hole TO-247-3 |
DataSheet: | NGTB75N60SWG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
1 +: | $ 4.09500 |
10 +: | $ 3.69810 |
100 +: | $ 3.06142 |
500 +: | $ 2.66585 |
1000 +: | $ 2.32187 |
Power - Max: | 595W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Reverse Recovery Time (trr): | 80ns |
Test Condition: | 400V, 75A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 110ns/270ns |
Gate Charge: | 310nC |
Input Type: | Standard |
Switching Energy: | 1.5mJ (on), 1mJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2V @ 15V, 75A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 100A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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An NGTB75N60SWG device is a high performance insulated gate bipolar transistor (IGBT). It is a high power transistor used in a variety of power electronic applications. This device is a discrete IGBT with a collector to emitter voltage rating up to 75 V and collector current up to 60 A. It has a low on-state voltage drop of 8.5 V, which ensures low power dissipation, high efficiency, and high power density.
The NGTB75N60SWG IGBT is comprised of an N-type classic transistor and two PN junction diodes sandwiched between two gate oxide layers. The PN junctions are connected in series to determine the breakdown voltage. The two junction diodes form what is known as the “body effect”, which improves the voltage transfer characteristic of the device.
The NGTB75N60SWG has many advantages over conventional power semiconductor devices. It is able to handle higher currents and voltages, with lower conduction losses and better switching performance. It also provides superior immunity to transient overvoltages, which reduces its susceptibility to electrical noise and reduces the EMI filtering requirements. Additionally, the switching time of the IGBT is much lower than that of conventional transistors, allowing it to switch faster in a wide range of applications.
The NGTB75N60SWG is commonly used in power electronics applications such as power supplies, motor drives, switch mode inverters, and traction systems. It is also well suited for high power resonant applications such as high power class D audio amplifiers and welding power supplies. The device is highly reliable and rugged, making it suitable for high ambient temperature applications.
The NGTB75N60SWG is driven using a three phase gate driver IC, with each phase providing a negative voltage to the collector, and a positive voltage to the emitter of the IGBT. This voltage adjusts the transistor’s conduction and switching characteristics, by controlling the amount of current flowing through the device. During turn-on, a positive gate voltage is applied, raising the potential of the collector and turning on the transistor. During turn-off, a negative gate voltage is applied, lowering the potential of the collector and turning off the transistor.
By controlling the gate voltage, the NGTB75N60SWG is able to effectively regulate the amount of power supplied to the load circuit. This makes the device ideally suited for controlling motor speed and power. It is also able to handle large inrush currents during start-up, by limiting the amount of current flowing through the device. This helps to reduce power losses and increase the efficiency of the system.
The application and working principle of the NGTB75N60SWG are indicative of its high power and reliability, and make it the preferred IGBT device for various power electronic applications. With its robust features and wide range of operating parameters, it is an ideal choice for both commercial and industrial applications that require high power and reliability.
The specific data is subject to PDF, and the above content is for reference
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