NGTB30N65IHL2WG Allicdata Electronics
Allicdata Part #:

NGTB30N65IHL2WG-ND

Manufacturer Part#:

NGTB30N65IHL2WG

Price: $ 2.30
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 70A 300W TO247
More Detail: IGBT Trench Field Stop 650V 60A 300W Through Hole ...
DataSheet: NGTB30N65IHL2WG datasheetNGTB30N65IHL2WG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
120 +: $ 2.08966
Stock 1000Can Ship Immediately
$ 2.3
Specifications
Power - Max: 300W
Supplier Device Package: TO-247-3
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 430ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: -/145ns
Gate Charge: 135nC
Input Type: Standard
Switching Energy: 200µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 650V
IGBT Type: Trench Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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IGBTs (Insulated Gate Bipolar Transistors) are semiconductor devices used in many high power and high frequency applications. They are widely used in power electronics applications such as motor drives, power switching, and lighting systems. NGTM30N65IHL2WG is a type of IGBTs that is suitable for many different applications. This article will discuss the application field and working principle of this IGBT.

Applications of NGTM30N65IHL2WG

The NGTM30N65IHL2WG IGBT can be used in a variety of applications. It is ideal for high frequency switching and rectifying applications. It is also suitable for motor drive, power switching, and lighting systems. It has excellent noise immunity and EMI performance, making it an ideal choice for applications that require high level of performance. Due to its low switching losses, it is well suited for high power applications such as renewable energy converters.

Working Principle of NGTM30N65IHL2WG

The NGTM30N65IHL2WG is a type of IGBT that combines both bipolar junction transistor and MOSFET operation. It operates in two basic modes: the “on” state and the “off” state. In the “on” state, the IGBT allows current to flow through its collector-emitter junction when the gate voltage is applied. This produces an amplifier effect, allowing the IGBT to be used as a switch. In the “off” state, the IGBT blocks the current flow, thus acting as an open-circuit element.

The IGBT is able to switch very quickly between the two states, allowing it to be used in applications where high switching performance is needed. Additionally, IGBTs are well suited for handling large amounts of power due to their low gate drive power requirements. This makes them a popular choice for applications where power efficiency is important.

Conclusion

The NGTM30N65IHL2WG is a type of IGBT that can be used in a variety of high power and high frequency applications. It is ideal for applications such as motor drives, power switching, and lighting systems. It has excellent noise immunity and EMI performance and its low switching losses make it well suited for high power applications. Additionally, the IGBT is able to switch quickly between its “on” and “off” states, making it a popular choice for applications where power efficiency is important.

The specific data is subject to PDF, and the above content is for reference

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