NGTB30N60FWG Allicdata Electronics
Allicdata Part #:

NGTB30N60FWGOS-ND

Manufacturer Part#:

NGTB30N60FWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 60A 167W TO247
More Detail: IGBT Trench 600V 60A 167W Through Hole TO-247
DataSheet: NGTB30N60FWG datasheetNGTB30N60FWG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
Power - Max: 167W
Switching Energy: 650µJ (on), 650µJ (off)
Input Type: Standard
Gate Charge: 170nC
Td (on/off) @ 25°C: 81ns/190ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 72ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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An IGBT is an Insulated Gate Bipolar Transistor. The NGTB30N60FWG is a type of IGBT device which is reliable and suits many applications. It provides various performance advantages over standard elements, such as reduced switching losses, greater efficiency, and greater flexibility when configured in circuits. This article covers the working principle and application field of this type of IGBT.

The NGTB30N60FWG is a high power (~30A) IGBT device with low losses and a fast switching speed. The high power output allows the device to be used in applications such as motor control, motion control, and power supplies. The optimized IGBT structure provides superior dynamic performance with a fast recovery time.

The device is made from a monolithic structure which contains a body diode and a composite base resistor in the form of a double-side bonded isolated gate. This allows for the large-scale integration of IGBTs into power control systems. The NGTB30N60FWG has a low on-state voltage drop which reduces switching and conduction losses. The device also has a low gate threshold voltage and is capable of withstanding high surge currents.

The working principle of the NGTB30N60FWG is simple and reliable. The device operates in two modes: a cut-off mode, which involves suppressing the base voltage, and a conducting mode, which involves increasing the base voltage. This allows for the device to be easily and accurately configured for a variety of applications. The device also operates at high frequencies and has a low forward voltage drop.

In terms of application field, the NGTB30N60FWG is suitable for a wide range of applications. It can be used in motor controls, power supplies, and energy conversion systems. The device is also suitable for DC/DC and AC/DC converters, as well as light dimming applications. Additionally, the device is suitable for inverter applications, as it has a low gate threshold voltage and can withstand high surge currents.

In conclusion, the NGTB30N60FWG is a reliable and high performing IGBT device. The optimized IGBT structure provides superior dynamic performance and low conduction losses, making it suitable for a range of applications. The device operates in two modes and can handle high switching and surge currents, making it an ideal choice for motor control, motion control, power supplies, and light dimming applications.

The specific data is subject to PDF, and the above content is for reference

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