NGTB75N60FL2WG Discrete Semiconductor Products

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The NGTB75N60FL2WG IGBT is one of the latest generation of Insulated Gate Bipolar Transistors (IGBTs) manufactured by On Semiconductor. It is a single-channel device that combines the high-speed switching capabilities of the classic IGBT with the highest level of voltage blocking capabilities.

The NGTB75N60FL2WG IGBT is designed for use in AC and DC motor control, power factor correction and photovoltaic (PV) systems, as well as other power conversion applications. It is a reliable device that has a wide operational temperature range, allowing it to operate in a wide variety of conditions. This device has been designed to achieve high efficiency and reliability across a broad voltage range.

The NGTB75N60FL2WG IGBT is a 60 A device that has a blocking voltage rating of 650 V, with a maximum collector-emitter saturation voltage of 2.6 V. It is capable of high-speed switching, providing fast switching times from its ultra-low gate charge and its low on-state resistance. It also features a low switching losses of 47 mJ.

The NGTB75N60FL2WG IGBT is designed to provide efficient operation with a low switching frequency. It is an H-bridge device that can be operated in a variety of applications, including AC and DC motor control, power factor correction and photovoltaic (PV) systems, as well as other power conversion applications. It is also capable of operating at high frequency, providing high-speed switching with a low switching losses.

The NGTB75N60FL2WG IGBT has an on-state current rating of up to 56 A and a collector-emitter saturation voltage of 2.6 V. It has a maximum rated junction temperature of 125 °C, and its H-bridge configuration allows for a range of operation modes, including forward, reverse and floating. It is also capable of operation with a higher frequency, providing higher power efficiency.

The NGTB75N60FL2WG IGBT has an operating temperature range of -40 to 95 °C, and its gate voltage level range is 5–10 V. It is ESD compliant and UL 1577 certified, ensuring that the device operates safely and reliably in any application.

The working principle of the NGTB75N60FL2WG IGBT is simple. It utilizes a gate-controlled turn-on and turn-off process whereby the base current is changed to adjust the gate voltage. During the on-state, the gate voltage is raised allowing current to flow from the collector to the emitter and maintaining the saturation voltage. During the off-state, the gate voltage is lowered, stopping current flow and preventing any losses.

In summary, the NGTB75N60FL2WG IGBT is a single-channel device that provides high-speed switching capabilities along with a reliable and efficient operation. It has a wide voltage range, high ratings and is designed to operate in a variety of applications. Its gate-controlled turn-on and turn-off process makes it an excellent choice for high-power systems requiring efficient, reliable and safe operation.

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