Allicdata Part #: | NGTB45N60SWG-ND |
Manufacturer Part#: |
NGTB45N60SWG |
Price: | $ 3.12 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 45A TO-247 |
More Detail: | IGBT Trench Field Stop 600V 90A 250W Through Hole ... |
DataSheet: | NGTB45N60SWG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
90 +: | $ 2.82793 |
Power - Max: | 250W |
Supplier Device Package: | TO-247-3 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 376ns |
Test Condition: | 400V, 45A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 70ns/144ns |
Gate Charge: | 134nC |
Input Type: | Standard |
Switching Energy: | 550µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 45A |
Current - Collector Pulsed (Icm): | 180A |
Current - Collector (Ic) (Max): | 90A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Not For New Designs |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
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The application field and working principle of the NGTB45N60SWG is of great importance in the field of transistors, and particularly in the insulating gate bipolar transistors (IGBTs). This type of transistor is becoming increasingly popular due to its combination of the properties of both MOSFET and bipolar junction transistors. The NGTB45N60SWG is a type of IGBT which has a vertical structure and is standard in the industry.
The application field of the NGTB45N60SWG is primarily in the fields of automotive, industrial applications and high power processing. Due to its design and combination of properties, the NGTB45N60SWG is a reliable and cost-effective solution for various applications. Its combination of properties allows it to withstand high temperature operation and its vertical structure allows it to maintain its characteristics in high temperature operating conditions. In the automotive industry, the NGTB45N60SWG is used for high power switches, high power control elements and high power motor control. It is also used in industrial applications such as motor control, power conversion and high power frequency supplies.
The main principle of the NGTB45N60SWG is its conductivity modulation, which is a combination of two basic principles of gate control. The gate voltage controls the gate current, which in-turn controls the conduction of the transistor. Thus, it can be used to regulate the current of an application. The NGTB45N60SWG also utilizes negative feedback characteristics, which allows the device to maintain its efficiency even when operating at high temperatures or levels of stress.
The structure of the NGTB45N60SWG is fairly simple, consisting of a substrate and collector, an insulation layer, a source, a floating body and an emitter. The substrate and collector form the base of the device, while the insulation layer and source provide insulation between them. The emitter is an electrode which collects electrons, and the floating body is a conducting material which helps to maintain the characteristics of the device during operation.
The NGTB45N60SWG is the most common type of IGBT used in the industry and is utilized due to its cost-effectiveness, its reliable operation and its ability to withstand high temperatures and stress levels. Furthermore, its simple design and combination of two basic principles of gate control make it an effective solution for many applications.
The specific data is subject to PDF, and the above content is for reference
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