NGTB40N120SWG Allicdata Electronics

NGTB40N120SWG Discrete Semiconductor Products

Allicdata Part #:

NGTB40N120SWGOS-ND

Manufacturer Part#:

NGTB40N120SWG

Price: $ 4.41
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 40A 1200V TO-247
More Detail: IGBT Trench 1200V 80A 535W Through Hole TO-247-3
DataSheet: NGTB40N120SWG datasheetNGTB40N120SWG Datasheet/PDF
Quantity: 177
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 4.41000
10 +: $ 4.27770
100 +: $ 4.18950
1000 +: $ 4.10130
10000 +: $ 3.96900
Stock 177Can Ship Immediately
$ 4.41
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 200A
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Power - Max: 535W
Switching Energy: 3.4mJ (on), 1.1mJ (off)
Input Type: Standard
Gate Charge: 313nC
Td (on/off) @ 25°C: 116ns/286ns
Test Condition: 600V, 40A, 10 Ohm, 15V
Reverse Recovery Time (trr): 240ns
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Description

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Introduction

NGTB40N120SWG is an innovative product that falls in the category of single-bit insulated gate bipolar transistors (IGBTs), and is suitable for driving applications in a wide range of industries, including automotive and industrial control systems. This article will explain the application fields, working principle and features of this product in further detail.

Application Field

The NGTB40N120SWG is designed for use in any high-power circuitry, such as automotive and industrial applications. Its wide array of features and capabilities make it an ideal choice for power conversion and switching applications. This IGBT module is capable of providing up to 2400 A of continuous current and a peak rating of 4800 A, making it suitable for controlling large motor applications as well. Furthermore, this IGBT is able to withstand voltages of up to 1200 V, making it a great choice for high voltage, high power applications. Furthermore, the NGTB40N120SWG has a low saturation voltage, making it an excellent choice for high-efficiency power conversion applications.

Working Principle

The NGTB40N120SWG is a single-bit IGBT, meaning that it is only composed of one IGBT chip. An IGBT is a form of transistor that combines the features of both bipolar transistors and field-effect transistors (FETs). It works by modulating the amount of current flowing through the device, thereby allowing for precise control of the output power. IGBTs are particularly useful in applications where a high voltage and high frequency are necessary.

Features

The NGTB40N120SWG offers a variety of unique features and capabilities, making it an attractive choice for high-power applications. These features include a high switching frequency, a high breakdown voltage, a low on-resistance, and an extremely fast switching time. This IGBT also has a low gate charge and a low saturation voltage, making it ideal for applications that require precise control of power output. In addition, this module has a long life cycle and is designed to withstand high temperatures. It is also resistant to electrical noise, making it an excellent choice for high-power applications.

Conclusion

In conclusion, the NGTB40N120SWG is a perfect fit for any high-power application. Its wide array of features, such as a high breakdown voltage, a low on-resistance, and a long life cycle make it an ideal choice for power conversion and switching applications. Its low gate charge and low saturation voltage make it an excellent choice for AC drive applications as well. Furthermore, this IGBT module is easy to install, making it an excellent choice for high-power application designs.

The specific data is subject to PDF, and the above content is for reference

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