NGTB30N135IHR1WG

Power - Max:	394W
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-40°C ~ 175°C (TJ)
Test Condition:	600V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C:	-/200ns
Gate Charge:	220nC
Input Type:	Standard
Switching Energy:	630µA (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	3V @ 15V, 30A
Current - Collector Pulsed (Icm):	120A
Current - Collector (Ic) (Max):	60A
Voltage - Collector Emitter Breakdown (Max):	1350V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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NGTB30N135IHR1WG Application Field and Working Principle

NGTB30N135IHR1WG is a discrete IGBT module in the Transistors - IGBTs - Single category. It is one of the most widely used device due to its excellent performance in electrical, thermal, and safety characteristics. It is widely used in high-frequency switching applications as well as other industries such as motor drives, relays, solenoids and converters.The NGTB30N135IHR1WG module is capable of providing very high breakdown voltage of up to 1700 Volts and current ratings of up to 30 Amps. It has a single chip gate driver and integrated gate protection units. This feature provides increased stability and reliability compared to other traditional devices. Furthermore, its IGBT combines the advantages of low-barrier MOSFETs and double lateral EPN (Extrinsic Performance Network) technologies.The core of this device is its NPN-based IGBT. This transistor is constructed with a multilayer structure, consisting of an N-type layer and a P-type layer. In this manner, the IGBT is able to transfer electrons from the N channel to the P channel. Since this allows for efficient and rapid current transfers, it makes it possible to turn the power on and off quickly.In order to work properly, the NGTB30N135IHR1WG module also requires an appropriate power switch. This power switch can be either a mechanical or electronic switch. The most common type of power switch is the MOSFET. This type of switch is used in many different applications including motor controllers, power converters and energy switches.The working principle of the NGTB30N135IHR1WG module is based on the principle of polarities. If a positive current is applied at the anode, it will result in an electric field being created between the anode and the cathode. This electric field will cause the electrons to flow through the N-type layer, thus creating a voltage potential between the anode and cathode. This voltage potential will cause current to flow through the device, which will then result in the completion of the switching action.As far as its application field, the NGTB30N135IHR1WG module is primarily designed for use in the high-frequency switching applications. This device can be used in relays, solenoids, and motors, among other uses. Furthermore, it can be used in power converters and energy switches, making it suitable for a wide range of services.In conclusion, the NGTB30N135IHR1WG module is a reliable tool which can fulfill a wide range of applications in various areas of electrical and electronic engineering. Its excellent performance in terms of thermal, safety, and electrical characteristics make it a popular choice among customers. Furthermore, its IGBT combination of low-barrier MOSFETs and EPN provides excellent and stable performance. Finally, its wide application field covers a range of uses, including relays and solenoids, as well as motor-drive and power conversion.

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