NGTB15N120IHTG

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NGTB15N120IHTG is part of the single-IBGTs transistor family. It has a blocking voltage range of 400V to 1200V and an average gate charging current of 30mA that makes it suitable for resonant converter, UPS power conversion and similar PFC applications. This IGBT has the ability to drive a much higher current per unit area than most other IGBTs and MOSFETs.

In general, IGBTs are unipolar transistors that are composed of power transistors and a thin layer of Insulated Gate Bipolar Transistor (IGBT). An IGBT transistor has two junctions. The anode junction is a bipole FET that is p-channel, while the cathode junction is composed of two n-channel MOSFETs connected circuits. This IGBT can switch to an on or off state without the need for external devices, such as relays. It has a positive gate-emitter bias voltage and can be turned on at a forward root voltage as low as 4V.

NGTB15N120IHTG can be used in applications ranging from chargers to motor controls, inverters, switch mode power supplies, and other applications involving the high-speed switching of large electrical currents.

The IGBT works by providing the gate of the power transistor with a relatively low voltage. This low voltage will turn on the transistor, allowing large amounts of current to then flow through it. This IGBT can be operated at high frequencies, allowing for fast switching of the power device. The IGBT can be used for both switching and current control.

When the power transistor is in the off-state, the gate voltage will be below the threshold voltage. When the power transistor is in the on-state, the gate voltage will be above the threshold voltage. The IGBT offers voltage and current tolerance ratings that are superior to MOSFETs and bipolar transistors.

NGTB15N120IHTG has a high-level maximum junction temperature (Tjmax) of 150 °C, a low-level maximum junction temperature (Tjmax) of 125 °C, and a maximum operating temperature of 150 °C. This IGBT has a small gate resistance of 600mohm, meaning that it can be switched quickly and the gate current can be kept low, this making the device more efficient.

In short, IGBTs are a special type of transistor designed for fast switching and high power efficiency. An NGTB15N120IHTG IGBT is able to switch current quickly, allowing for superior power conversion in applications such as motor controlling, inverters and switch mode power supplies. With its high voltage tolerance and low gate resistance, this IGBT can be used for both switching and current control.

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