Allicdata Part #: | NGTB15N120LWGOS-ND |
Manufacturer Part#: |
NGTB15N120LWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 1200V 30A 156W TO247-3 |
More Detail: | IGBT Trench Field Stop 1200V 30A 229W Through Hole... |
DataSheet: | NGTB15N120LWG Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
IGBT Type: | Trench Field Stop |
Voltage - Collector Emitter Breakdown (Max): | 1200V |
Current - Collector (Ic) (Max): | 30A |
Current - Collector Pulsed (Icm): | 120A |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 15A |
Power - Max: | 229W |
Switching Energy: | 2.1mJ (on), 560µJ (off) |
Input Type: | Standard |
Gate Charge: | 160nC |
Td (on/off) @ 25°C: | 72ns/165ns |
Test Condition: | 600V, 15A, 15 Ohm, 15V |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
An NGTB15N120LWG is an insulated gate bipolar transistors (IGBT) that is suitable for high speed switching in applications such as soft starters, motor control, and power converters. An NGTB15N120LWG device is a popular single IGBT that has a voltage rating of 1200V and a current rating of 15A. These features, combined with its low on-state resistance and fast switching capability, make this device an attractive choice for a variety of power switching applications.
Application Areas
The NGTB15N120LWG is suitable for a variety of power switching applications. It can be used in applications such as motor control, soft starters, uninterruptible power supplies (UPS), and power converters. The high-speed switching capabilities allows for efficient use of power and reduced energy consumption. The low on-state resistance of the device reduces switching losses and enables higher efficiency. The device is also suited for welding applications due to its high current capability and low switching losses.
IGBT Working Principle
An IGBT is a type of power semiconductor device that combines the characteristics of a transistor and a thyristor. It has an insulated gate, which is an insulated field effect transistor (FET) that is used to control the voltage across the device. When a voltage is applied to the gate, an electric field is created that allows current to flow through the device, allowing the device to enter its on state. When the voltage is removed, the electric field is destroyed and the device returns to its off state.
Conclusion
The NGTB15N120LWG is a single IGBT that is suitable for a wide range of high speed switching applications. Its low on-state resistance and fast switching capability make it an attractive choice for a variety of power switching applications, such as motor control, soft starters, and power converters. The working principle of an IGBT is based on an insulated gate field effect transistor, which controls the voltage across the device and allows for efficient use of power.
The specific data is subject to PDF, and the above content is for reference
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NGTB50N60L2WG | ON Semicondu... | 5.15 $ | 1000 | IGBT 600V 50A TO247IGBT T... |
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NGTB30N120L2WG | ON Semicondu... | 7.01 $ | 1000 | IGBT 1200V 60A 534W TO247... |
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NGTB40N120IHRWG | ON Semicondu... | 3.61 $ | 233 | IGBT 1200V 80A 384W TO247... |
NGTB40N120SWG | ON Semicondu... | 4.85 $ | 177 | IGBT 40A 1200V TO-247IGBT... |
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NGTB25N120FL3WG | ON Semicondu... | 3.4 $ | 415 | IGBT 1200V 100A TO247IGBT... |
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