NGTB15N120LWG Allicdata Electronics
Allicdata Part #:

NGTB15N120LWGOS-ND

Manufacturer Part#:

NGTB15N120LWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 1200V 30A 156W TO247-3
More Detail: IGBT Trench Field Stop 1200V 30A 229W Through Hole...
DataSheet: NGTB15N120LWG datasheetNGTB15N120LWG Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200V
Current - Collector (Ic) (Max): 30A
Current - Collector Pulsed (Icm): 120A
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Power - Max: 229W
Switching Energy: 2.1mJ (on), 560µJ (off)
Input Type: Standard
Gate Charge: 160nC
Td (on/off) @ 25°C: 72ns/165ns
Test Condition: 600V, 15A, 15 Ohm, 15V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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Introduction

An NGTB15N120LWG is an insulated gate bipolar transistors (IGBT) that is suitable for high speed switching in applications such as soft starters, motor control, and power converters. An NGTB15N120LWG device is a popular single IGBT that has a voltage rating of 1200V and a current rating of 15A. These features, combined with its low on-state resistance and fast switching capability, make this device an attractive choice for a variety of power switching applications.

Application Areas

The NGTB15N120LWG is suitable for a variety of power switching applications. It can be used in applications such as motor control, soft starters, uninterruptible power supplies (UPS), and power converters. The high-speed switching capabilities allows for efficient use of power and reduced energy consumption. The low on-state resistance of the device reduces switching losses and enables higher efficiency. The device is also suited for welding applications due to its high current capability and low switching losses.

IGBT Working Principle

An IGBT is a type of power semiconductor device that combines the characteristics of a transistor and a thyristor. It has an insulated gate, which is an insulated field effect transistor (FET) that is used to control the voltage across the device. When a voltage is applied to the gate, an electric field is created that allows current to flow through the device, allowing the device to enter its on state. When the voltage is removed, the electric field is destroyed and the device returns to its off state.

Conclusion

The NGTB15N120LWG is a single IGBT that is suitable for a wide range of high speed switching applications. Its low on-state resistance and fast switching capability make it an attractive choice for a variety of power switching applications, such as motor control, soft starters, and power converters. The working principle of an IGBT is based on an insulated gate field effect transistor, which controls the voltage across the device and allows for efficient use of power.

The specific data is subject to PDF, and the above content is for reference

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