| Allicdata Part #: | NGTB15N120LWGOS-ND |
| Manufacturer Part#: |
NGTB15N120LWG |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | IGBT 1200V 30A 156W TO247-3 |
| More Detail: | IGBT Trench Field Stop 1200V 30A 229W Through Hole... |
| DataSheet: |  NGTB15N120LWG Datasheet/PDF |
| Quantity: | 1000 |
| Switching Energy: | 2.1mJ (on), 560µJ (off) |
| Supplier Device Package: | TO-247 |
| Package / Case: | TO-247-3 |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Test Condition: | 600V, 15A, 15 Ohm, 15V |
| Td (on/off) @ 25°C: | 72ns/165ns |
| Gate Charge: | 160nC |
| Input Type: | Standard |
| Series: | -- |
| Power - Max: | 229W |
| Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 15A |
| Current - Collector Pulsed (Icm): | 120A |
| Current - Collector (Ic) (Max): | 30A |
| Voltage - Collector Emitter Breakdown (Max): | 1200V |
| IGBT Type: | Trench Field Stop |
| Part Status: | Obsolete |
| Packaging: | Tube |
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Introduction
An NGTB15N120LWG is an insulated gate bipolar transistors (IGBT) that is suitable for high speed switching in applications such as soft starters, motor control, and power converters. An NGTB15N120LWG device is a popular single IGBT that has a voltage rating of 1200V and a current rating of 15A. These features, combined with its low on-state resistance and fast switching capability, make this device an attractive choice for a variety of power switching applications.
Application Areas
The NGTB15N120LWG is suitable for a variety of power switching applications. It can be used in applications such as motor control, soft starters, uninterruptible power supplies (UPS), and power converters. The high-speed switching capabilities allows for efficient use of power and reduced energy consumption. The low on-state resistance of the device reduces switching losses and enables higher efficiency. The device is also suited for welding applications due to its high current capability and low switching losses.
IGBT Working Principle
An IGBT is a type of power semiconductor device that combines the characteristics of a transistor and a thyristor. It has an insulated gate, which is an insulated field effect transistor (FET) that is used to control the voltage across the device. When a voltage is applied to the gate, an electric field is created that allows current to flow through the device, allowing the device to enter its on state. When the voltage is removed, the electric field is destroyed and the device returns to its off state.
Conclusion
The NGTB15N120LWG is a single IGBT that is suitable for a wide range of high speed switching applications. Its low on-state resistance and fast switching capability make it an attractive choice for a variety of power switching applications, such as motor control, soft starters, and power converters. The working principle of an IGBT is based on an insulated gate field effect transistor, which controls the voltage across the device and allows for efficient use of power.
The specific data is subject to PDF, and the above content is for reference
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|---|
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| NGTB50N60SWG | ON Semicondu... | 3.28 $ | 1000 | IGBT 600V 50A TO247IGBT T... |
| NGTB15N120LWG | ON Semicondu... | -- | 1000 | IGBT 1200V 30A 156W TO247... |
| NGTB45N60S2WG | ON Semicondu... | -- | 1000 | IGBT 45A 600V TO-247IGBT ... |
| NGTB75N60FL2WG | ON Semicondu... | 6.07 $ | 1000 | IGBT 600V 75A TO247IGBT T... |
| NGTB30N120LWG | ON Semicondu... | 0.0 $ | 1000 | IGBT 1200V 30A TO247IGBT ... |
| NGTB50N60FLWG | ON Semicondu... | -- | 1000 | IGBT 600V 50A TO247IGBT T... |
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| NGTB40N120IHLWG | ON Semicondu... | 0.0 $ | 1000 | IGBT 1200V 40A TO247IGBT ... |
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| NGTB30N120L2WG | ON Semicondu... | 7.01 $ | 1000 | IGBT 1200V 60A 534W TO247... |
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| NGTB40N135IHRWG | ON Semicondu... | 3.89 $ | 90 | IGBT 1350V 80A 394W TO247... |
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