NGTB40N60L2WG Discrete Semiconductor Products

Power - Max:	417W
Supplier Device Package:	TO-247
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	73ns
Test Condition:	400V, 40A, 10 Ohm, 15V
Td (on/off) @ 25°C:	98ns/213ns
Gate Charge:	228nC
Input Type:	Standard
Switching Energy:	1.17mJ (on), 280µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2.61V @ 15V, 40A
Current - Collector Pulsed (Icm):	160A
Current - Collector (Ic) (Max):	80A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench Field Stop
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

An NGTB40N60L2WG is a type of Insulated Gate Bipolar Transistor (IGBT) specifically a single IGBT that is used for power switching and/or amplifying applications. IGBTs are considered to have advantages over other types of transistors and they are used in high current applications. The NGTB40N60L2WG transistor features a maximum block voltage of 600 V, can withstand a collector-emitter voltage of 600V and can handle a maximum DC collector current of 40 A.

Application Field

The NGTB40N60L2WG is designed to be used in numerous power switching applications, where high current is required and also they can be used in amplifying applications. Major applications fields are as thus:Power Supplies: The NGTB40N60L2WG are commonly used in power supplies, like in Uninterruptible Power Supplies (UPS), AC/DC and DC/DC converters, to control the power rectified and converted in the power supply itself.Motor Drives: Aside from the power supplies, are the motor drives where NGTB40N60L2WG are used in order to control the motors currents. Motor drives applications fields vary according the type of motor itself and they can range from household electric fan motors, to industrial applications like electric trains, airplanes or electric ships.Inverters: An inverter, as the power supply, also includes IGBTs in it\'s components. IGBTs, as the previously mentioned NGTB40N60L2WG, are used as switching devices in order to convert the direct current in the batteries, to an alternating current that can be used for supplying the loads of the energy system.Telecommunications: The NGTB40N60L2WG, as a switching and amplifying device, are also used in telecommunications applications. This includes mobile amplifiers, antennae circuits and adapter amplifiers.

Working Principle

A NGTB40N60L2WG, as an IGBT, has an insulated gate configuration sharing combined features of field effect transistor and bipolar transistor characteristics. This transistor behaviour can be explained as an integration of two devices in a single package and is also referred as a "CMOS on Silicon".This type of transistor devices works in two stages, in a first stage, the insulated gate is used to control the bipolar region of the transistor, through the application of an electric potential to the insulated gate. This way the bipolar region is electronically open or closed in a fast and efficient way. When the bipolar region is open current can flow easily from collector to emitter and is reversed on a closed bipolar one.From the collector-emitter current point of view a NGTB40N60L2WG can be considered as an ideal switch, as an ideal switch can conduct high current when closed and practically no current when open.The second stage regards the amplification characteristic of the transistor which is the collector-base current flow, when the insulated gate is maintained in a fixed position the electrons can still diffuse from collector to base, thus amplifying the electric signal entered in the insulated gate.

Conclusion

The NGTB40N60L2WG transistor is designed to be used in numerous power switching and amplifying applications, with a maximum block voltage of 600V, a collector-emitter voltage of 600V and a maximum DC collector current of 40A.It features an IGBT behaviour in which an insulated gate is used to control a bipolar region of the transistor in order to open or close it in a fast and efficient way and at the same time amplifies the entered electric signal.This type of transistor is well suited for power supplies, motor drive applications, telecommunications and inverters.

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