NGTB30N60IHLWG Allicdata Electronics

NGTB30N60IHLWG Discrete Semiconductor Products

Allicdata Part #:

NGTB30N60IHLWGOS-ND

Manufacturer Part#:

NGTB30N60IHLWG

Price: $ 3.12
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 30A TO247
More Detail: IGBT Trench Field Stop 600V 60A 250W Through Hole ...
DataSheet: NGTB30N60IHLWG datasheetNGTB30N60IHLWG Datasheet/PDF
Quantity: 207
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
1 +: $ 2.84130
10 +: $ 2.55024
100 +: $ 2.08971
500 +: $ 1.77890
1000 +: $ 1.50028
Stock 207Can Ship Immediately
$ 3.12
Specifications
Series: --
Packaging: Tube 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 600V
Current - Collector (Ic) (Max): 60A
Current - Collector Pulsed (Icm): 150A
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Power - Max: 250W
Switching Energy: 280µJ (off)
Input Type: Standard
Gate Charge: 130nC
Td (on/off) @ 25°C: 70ns/140ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Reverse Recovery Time (trr): 400ns
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Description

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Integrated gate-commutated thyristors, or IGBTs, are switching devices used in a wide variety of applications. The most common type of IGBT is the single N-channel IGBT. The NGTB30N60IHLWG is a N-channel IGBT manufactured by ON Semiconductor. The device is a superb choice for applications such as lighting, AC/DC rectification, servo control, and high voltage power supplies. Its low profile, low power consumption and high current rating make it an ideal choice for these types of applications.

The NGTB30N60IHLWG is a single N-channel IGBT. The device has a maximum voltage rating of 600V and a maximum current rating of 30A. It is available in both a standard and reverse geometry package. The standard package is a single half-bridge module, while the reverse geometry package is a half-bridge module with the cathode connected to the gate.

At the heart of the NGTB30N60IHLWG is its gate-commutated thyristor (GCT) structure. GCTs are three-terminal devices designed to provide low RDS(on) and fast switching. This is achieved by having two gates; a control gate and a main gate. The control gate is used to regulate the current in the device and prevent it from exceeding safe levels. The main gate is used to open and close the connection between the source and drain, effectively controlling the switching of the device.

The NGTB30N60IHLWG has an advanced driver integrated circuit (IC). This is used to provide the drive signal to turn the device on and off. The device also has an internal soft start circuit which limits the inrush current and prevents damage to the device. Additionally, a short-circuit protection feature is included which will keep the device off until the short-circuit is removed. This feature is particularly useful for applications such as inverters, servo motors and other high voltage power supplies.

The NGTB30N60IHLWG is well-suited for use in lighting, AC/DC rectification, servo control, and high voltage power supplies. Its low profile, low power consumption and high current rating make it an ideal choice for these types of applications. Additionally, its high-speed switching, high-temperature resistance, and advanced driver IC make it a superior choice for these applications. As such, the NGTB30N60IHLWG is an excellent choice for applications requiring efficient, reliable power switching.

The specific data is subject to PDF, and the above content is for reference

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