NGTB25N120FL2WAG Allicdata Electronics
Allicdata Part #:

NGTB25N120FL2WAG-ND

Manufacturer Part#:

NGTB25N120FL2WAG

Price: $ 2.88
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT FIELD STOP 1.2KV TO247-4
More Detail: IGBT Field Stop 1200V 100A 385W Through Hole TO-24...
DataSheet: NGTB25N120FL2WAG datasheetNGTB25N120FL2WAG Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
90 +: $ 2.61954
Stock 1000Can Ship Immediately
$ 2.88
Specifications
Power - Max: 385W
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Reverse Recovery Time (trr): 136ns
Test Condition: 600V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C: 17ns/113ns
Gate Charge: 181nC
Input Type: Standard
Switching Energy: 990µJ (on), 660µJ (off)
Series: --
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Current - Collector Pulsed (Icm): 100A
Current - Collector (Ic) (Max): 100A
Voltage - Collector Emitter Breakdown (Max): 1200V
IGBT Type: Field Stop
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tube 
Description

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The NGTB25N120FL2WAG is a type of IGBT (Insulated Gate Bipolar Transistor) that has been designed for use in fast switching applications. It is a 3-phase transistor module which is suitable for use with a wide range of applications including motor control, power conversion, and power switching.

The IGBT is a type of power transistor that combines features from both the MOSFET (metal-oxide-semiconductor field-effect transistor) and the Bipolar Junction Transistor (BJT). It is widely used in power electronics due to its relatively high switching frequency, good turn-off speed, ability to handle high power, and low power losses. This makes the NGTB25N120FL2WAG an ideal choice for high-power, high-frequency, high-temperature applications.

The NGTB25N120FL2WAG is a single IGBT module with 3 phase, each rated up to 125A. This high current capacity, coupled with its high maximum allowed junction temperature of 175°C make it suitable for use in demanding applications such as motor control, power conversion, and power switching.

The NGTB25N120FL2WAG works by switching an insulated gate voltage between its two terminals, inducing current through the transistor. It uses a gate–emitter voltage to control the flow of current from its source to its drain. When the gate voltage is at a level higher than the threshold voltage, current can flow from the source, through the gate, and to the drain. When the gate voltage is less than the threshold voltage, current cannot pass from the source.

The module offers excellent safety features, including thermal protection and short circuit protection. It also has an integrated gate driver and voltage regulator, allowing the user to adjust the gate voltage to achieve ideal withstand voltage and gate current. The product also features a built-in inverse parallel connection, which allows several of these devices to be connected in parallel for higher current output.

In conclusion, the NGTB25N120FL2WAG is a high power single IGBT module, designed for use in high switching applications. It is suitable for a variety of motor control, power conversion, and power switching applications due to its high current capacity, high maximum allowed junction temperature, over-current protection, and inverse parallel connection feature. Its high switching frequency, good turn-off speed, and low power losses make it an ideal choice for high-frequency, high-temperature applications.

The specific data is subject to PDF, and the above content is for reference

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