NGTB40N60FLWG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB40N60FLWGOS-ND |
Manufacturer Part#: |
NGTB40N60FLWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 80A 257W TO247 |
More Detail: | IGBT Trench Field Stop 600V 80A 257W Through Hole ... |
DataSheet: | NGTB40N60FLWG Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 257W |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 77ns |
Test Condition: | 400V, 40A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 85ns/174ns |
Gate Charge: | 171nC |
Input Type: | Standard |
Switching Energy: | 890µJ (on), 440µJ (off) |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 2.1V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 160A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
An NGTB40N60FLWG (Next Generation Trench IGBT) is a type of transistor that falls under the category of “IGBTs - Single”. IGBTs, or insulated gate bipolar transistors, are a combination of a field effect transistor and a bipolar junction transistor, taking the best of both in order to create power switches with a higher efficiency and faster switching time. The NGTB40N60FLWG also stands out from other types of IGBTs due to its improved performance when operated at higher frequencies.
This particular IGBT offers a high maximum working voltage of up to 600V, fitting in perfectly to any high DC voltage applications. It also has a maximum current rating of 40A, giving it a place in applications that require lower current but still need high-speed response. The NGTB40N60FLWG also offers improved switching performance between turn-off delays and temperatures of 150°C max, giving it a place in even the most demanding applications.
In terms of applications, the NGTB40N60FLWG can be used for many purposes such as switching of DC power supplies, PWM inverters and more. Its relatively lower on-state power loss and greater system efficiency makes it an ideal choice for these types of applications.
The working principle of the NGTB40N60FLWG is quite straightforward. It is designed to use the same principle as all IGBTs, which is to control current in a circuit by using a combination of an insulated gate FET and a bipolar junction transistor. The gate is used to control the current direction, by varying its voltage and thus controlling the current flow. This makes it extremely effective for applications such as motor drives, where it can be used to rapidly switch current and achieve the desired motor speed.
The NGTB40N60FLWG is an extremely versatile and reliable transistor that is ideal for a wide range of applications. It can be used in many high-voltage and low-current applications, as well as in applications where rapid switching of current is needed. Its capability of handling high voltage makes it a great choice for applications such as motor drives, inverters, and more.
The specific data is subject to PDF, and the above content is for reference
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NGTB30N120L2WG | ON Semicondu... | 7.01 $ | 1000 | IGBT 1200V 60A 534W TO247... |
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