
NGTB10N60FG Discrete Semiconductor Products |
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Allicdata Part #: | NGTB10N60FGOS-ND |
Manufacturer Part#: |
NGTB10N60FG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 10A TO220F3 |
More Detail: | IGBT 600V 20A 40W Through Hole TO-220F-3FS |
DataSheet: | ![]() |
Quantity: | 500 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Power - Max: | 40W |
Supplier Device Package: | TO-220F-3FS |
Package / Case: | TO-220-3 Full Pack |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Reverse Recovery Time (trr): | 70ns |
Test Condition: | 300V, 10A, 30 Ohm, 15V |
Td (on/off) @ 25°C: | 40ns/145ns |
Gate Charge: | 55nC |
Input Type: | Standard |
Switching Energy: | -- |
Series: | -- |
Vce(on) (Max) @ Vge, Ic: | 1.7V @ 15V, 10A |
Current - Collector Pulsed (Icm): | 72A |
Current - Collector (Ic) (Max): | 20A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | -- |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The NGTB10N60FG is a 600V single N-Channel IGBT and is the perfect component for a variety of applications. The device has an integrated anti-parallel diodes, low gate charges and high speed switching. It is capable of operating in both modes; in linear mode it can be used for power amplifiers or power supplies, and in switching mode for inverters, short-circuit switches, DC/DC converters and DCDC converters.
The anti-parallel diodes of the NGTB10N60FG are ideal for protecting sensitive components from voltage spikes that could cause damage. The device also has very low gate charge and offers fast switching performance with its fast soft recovery characteristics.
The NGTB10N60FG can be used in a wide range of applications including switching power supplies, lighting systems, industrial control systems, power amplifiers and power electronics. It can operate in both hard wired and PWM applications, and it can be used in either linear or switching mode.
The working principle of the NGTB10N60FG is based on the transfer of current through the N-Channel when a certain threshold voltage is applied to the gate of the component. When the gate voltage is below the threshold voltage, only a small current passes through the component. However, when the gate voltage exceeds the threshold voltage, the component allows a considerably larger current.
The NGTB10N60FG offers very low on-state resistance, making it well suited for high-current applications. Its low gate charge and fast switching characteristics make it ideal for power supplies, lighting systems and industrial control systems. As well as the integrated anti-parallel diodes, the device has improved EMI performance, making it well suited for use in noisy environments.
The NGTB10N60FG is a highly versatile component, capable of operating in both linear and switching mode. It can be used for applications such as power amplifiers, inverters, DCDC converters and short-circuit switches. Its low on-state resistance and fast switching speed make it ideal for a variety of high-power applications.
The specific data is subject to PDF, and the above content is for reference
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