NGTB30N60SWG Allicdata Electronics
Allicdata Part #:

NGTB30N60SWGOS-ND

Manufacturer Part#:

NGTB30N60SWG

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: IGBT 600V 60A 189W TO247
More Detail: IGBT Trench Field Stop 600V 60A 189W Through Hole ...
DataSheet: NGTB30N60SWG datasheetNGTB30N60SWG Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Switching Energy: 750µJ (on), 540µJ (off)
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 200ns
Test Condition: 400V, 30A, 10 Ohm, 15V
Td (on/off) @ 25°C: 57ns/109ns
Gate Charge: 90nC
Input Type: Standard
Series: --
Power - Max: 189W
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 30A
Current - Collector Pulsed (Icm): 120A
Current - Collector (Ic) (Max): 60A
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Part Status: Obsolete
Packaging: Tube 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The NGTB30N60SWG is a type of Insulated Gate Bipolar Transistor (IGBT). It is a single-power module for high frequency power switching, designed for use in a wide range of applications such as motor control and power conversion. The NGTB30N60SWG is specifically designed for power converters operating in extreme conditions, where high peak temperatures, vibrations and other environmental stress can degrade the performance of other components.

The NGTB30N60SWG combines the low conduction losses of a MOSFET with the high switching capabilities of a bipolar transistor to create an ideal solution for power conversion in harsh environments. It is a voltage driven device that is normally on, which means that the power is applied to turn it off. This makes it suitable for applications such as motor control, where the NGTB30N60SWG can be used to control the speed and direction of the motor.

The NGTB30N60SWG features a low-voltage design, meaning that it requires less current to operate than other IGBTs. This makes it more efficient and increases its life expectancy. It also offers enhanced power switching performance and better system reliability, along with low gate capacitance and improved thermal performance.

The NGTB30N60SWG’s working principle is based on the process of bipolar junction formation. This process involves the formation of two doping regions in a semiconductor material. When a voltage is applied to the IGBT, the two doping regions form junctions, which allow current to flow. This current flow is then used to control the switch, allowing it to toggle between its two main states, on and off.

The NGTB30N60SWG is ideally suited for applications such as motor control, which require high-frequency switching and low voltage operation. It can also be used in lighting applications, as well as in energy storage, power tools, and even welding applications. In addition, it can also be used in many consumer electronics and automotive applications.

The NGTB30N60SWG is an excellent choice for applications requiring high performance, low-voltage operation and reliable power switching. Its low gate capacitance and improved thermal performance make it an ideal solution for harsh environments, and its timely response makes it an ideal choice for motor control and power conversion.

The specific data is subject to PDF, and the above content is for reference

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