Allicdata Part #: | NGTB30N60SWGOS-ND |
Manufacturer Part#: |
NGTB30N60SWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 60A 189W TO247 |
More Detail: | IGBT Trench Field Stop 600V 60A 189W Through Hole ... |
DataSheet: | NGTB30N60SWG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Switching Energy: | 750µJ (on), 540µJ (off) |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 200ns |
Test Condition: | 400V, 30A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 57ns/109ns |
Gate Charge: | 90nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 189W |
Vce(on) (Max) @ Vge, Ic: | 2.2V @ 15V, 30A |
Current - Collector Pulsed (Icm): | 120A |
Current - Collector (Ic) (Max): | 60A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Part Status: | Obsolete |
Packaging: | Tube |
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The NGTB30N60SWG is a type of Insulated Gate Bipolar Transistor (IGBT). It is a single-power module for high frequency power switching, designed for use in a wide range of applications such as motor control and power conversion. The NGTB30N60SWG is specifically designed for power converters operating in extreme conditions, where high peak temperatures, vibrations and other environmental stress can degrade the performance of other components.
The NGTB30N60SWG combines the low conduction losses of a MOSFET with the high switching capabilities of a bipolar transistor to create an ideal solution for power conversion in harsh environments. It is a voltage driven device that is normally on, which means that the power is applied to turn it off. This makes it suitable for applications such as motor control, where the NGTB30N60SWG can be used to control the speed and direction of the motor.
The NGTB30N60SWG features a low-voltage design, meaning that it requires less current to operate than other IGBTs. This makes it more efficient and increases its life expectancy. It also offers enhanced power switching performance and better system reliability, along with low gate capacitance and improved thermal performance.
The NGTB30N60SWG’s working principle is based on the process of bipolar junction formation. This process involves the formation of two doping regions in a semiconductor material. When a voltage is applied to the IGBT, the two doping regions form junctions, which allow current to flow. This current flow is then used to control the switch, allowing it to toggle between its two main states, on and off.
The NGTB30N60SWG is ideally suited for applications such as motor control, which require high-frequency switching and low voltage operation. It can also be used in lighting applications, as well as in energy storage, power tools, and even welding applications. In addition, it can also be used in many consumer electronics and automotive applications.
The NGTB30N60SWG is an excellent choice for applications requiring high performance, low-voltage operation and reliable power switching. Its low gate capacitance and improved thermal performance make it an ideal solution for harsh environments, and its timely response makes it an ideal choice for motor control and power conversion.
The specific data is subject to PDF, and the above content is for reference
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