NGTB25N120IHLWG

Series:	--
Packaging:	Tube
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
IGBT Type:	--
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	50A
Current - Collector Pulsed (Icm):	200A
Vce(on) (Max) @ Vge, Ic:	2.3V @ 15V, 25A
Power - Max:	192W
Switching Energy:	800µJ (off)
Input Type:	Standard
Gate Charge:	200nC
Td (on/off) @ 25°C:	-/235ns
Test Condition:	600V, 25A, 10 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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Introduction

N-channel enhanced mode IGBT with high dV/dt, NGTB25N120IHLWG is a general purpose IGBT transistor extensively used in various applications due to its high performance, cost effectiveness and wide spectrum of applications. This transistor has been designed for fast switching applications that require fast switching times and superior current sourcing, as it combines the voltage ratings and short circuit capability of an insulated gate MOSFET with current capabilities of a bipolar transistor.

Applications of NGTB25N120IHWG

NGTB25N120IHLWG can be found in applications such as welding, solenoids, motor control, switch-mode power supplies and high voltage switching. This transistor is generally used for motor drive circuits and general power circuit. It is also used for DC motor control and power management in home appliances and applications such as automated test equipment, heater control, AC inverters and HVAC systems. This transistor is also used for applications where inductive voltage and current transients exist, such as in motor drives and switch-mode power supplies. In these applications, its N-channel design minimizes loss and increases efficiency, as they can operate at higher temperatures while still providing superior performance. These transistors are also used in consumer electronics such as video game consoles, television camcorders, and audio amplifiers. Additionally, they have been found in applications such as LCD televisions, GPS and photovoltaic systems.

Working Principle of NGTB25N120IHLWG

NGTB25N120IHLWG is a combination of a bipolar junction transistor (BJT) and a MOSFET. This combination is referred to as an isolated gate bi-polar transistor (IGBT). The IGBTs are able to handle high levels of current, allowing for high power levels to be dealt with in a relatively small package. In the simplest terms, this transistor works by having a gate voltage applied to the gate electrode. When a voltage is applied to the gate electrode, it causes a depletion region to form in the semiconductor material. This depletion region serves as an insulator and prevents any current from flowing from the source to the drain. The IGBT also includes an extra section which is known as the base region. This region allows for current to flow when the gate voltage is applied, enabling the transistor to be switched on. When the gate voltage is removed, the transistor is off and no current can flow through it. The IGBT is considered to be one of the most efficient methods of power control, as the combination of the BJT and MOSFET ensure that the transistor has high switching speeds while also providing a strong current flow. The IGBT is also able to withstand voltages and transients, making it incredibly useful for applications such as motor drives and switch-mode power supplies.

Conclusion

NGTB25N120IHLWG is a combination of a bipolar junction transistor (BJT) and a MOSFET. This combination allows for NGTB25N120IHLWG to offer excellent performance with high dV/dt, high voltage ratings and short circuit capability. The transistor is extensively used in a wide range of applications such as welding, solenoids, motor control, home appliances, automated test equipment, and switch-mode power supplies. The working principle of NGTB25N120IHLWG is based on the principle of current flow when a gate voltage is applied, allowing for high current levels to be processed in a relatively small package.

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