NGTB40N120IHLWG

Series:	--
Packaging:	Tube
Part Status:	Obsolete
IGBT Type:	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):	1200V
Current - Collector (Ic) (Max):	80A
Current - Collector Pulsed (Icm):	320A
Vce(on) (Max) @ Vge, Ic:	2.35V @ 15V, 40A
Power - Max:	260W
Switching Energy:	1.4mJ (off)
Input Type:	Standard
Gate Charge:	420nC
Td (on/off) @ 25°C:	-/360ns
Test Condition:	600V, 40A, 10 Ohm, 15V
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-247-3
Supplier Device Package:	TO-247

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Introduction to NGTB40N120IHLWGThe NGTB40N120IHLWG is a type of Insulated Gate Bipolar Transistor (IGBT). It is a Single IGBT, which is a three-terminal power semiconductor device, characterized by its high input impedance, fast switching speed, and high power output insulation. The NGTB40N120IHLWG is an important device in many applications because of its versatility in power generation, switching, and rectification.Application FieldsThe NGTB40N120IHLWG is a versatile power semiconductor device, and is heavily incorporated in many applications. Due to its three-terminal configuration, it can be used for power switching and rectification. This device is also commonly used in Voltage Source Inversions (VSI) as a bidirectional switch, as well as in Cycloconverters technology for voltage control.The high switching speed of the NGTB40N120IHLWG allows it to be used in Frequency Converters for the power output stage, as well as Pulse Transformer Transformers for power conditioning. As a wide bandgap type semiconductor, the NGTB40N120IHLWG also has great applications in Power Electronics. Furthermore, its high output insulation makes this device perfect for high power electric drives and electrical motors as an efficient source of power.Working Principle of NGTB40N120IHLWGThe working principle and operation of the NGTB40N120IHLWG is based on the two main components of this device, the junction field transistor (JFET) and the insulated gate bipolar transistor (IGBT). During operation, the JFET is responsible for driving the IGBT which then shifts the current through the junction and gate of the IGBT.The operation of this device begins when an external voltage is applied to the gates of the JFET and IGBT. This external voltage causes an electric field in the junction of the JFET, which causes a current to be driven down. This current is then regulated through the gate of the IGBT, which in turn, controls the voltage applied to the gate of the device and the amount of current that is allowed to flow.The JFET and the IGBT each have their own unique properties, which when combined together, make this device uniquely suitable for a variety of power applications. The JFET is responsible for driving the current, while the IGBT regulates the voltage applied to the gate and the current flowing through it. The combination of these two components provides the NGTB40N120IHLWG with high input impedance, fast switching speed, and high output insulation.ConclusionThe NGTB40N120IHLWG is an important type of Insulated Gate Bipolar Transistor (IGBT). It is a Single IGBT, with a three-terminal configuration and is characterized by its high input impedance, fast switching speed, and high power output insulation. This device is heavily used in many applications including power switching, rectification, voltage source inverters, power conditioning, electric drives, and electrical motors. The working principle of the device is based on two components, the JFET and IGBT, which when combined provide the device with its efficient and versatile operation.

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