Allicdata Part #: | NGTB40N60IHLWGOS-ND |
Manufacturer Part#: |
NGTB40N60IHLWG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | IGBT 600V 40A TO247 |
More Detail: | IGBT Trench Field Stop 600V 80A 250W Through Hole ... |
DataSheet: | NGTB40N60IHLWG Datasheet/PDF |
Quantity: | 1000 |
Switching Energy: | 400µJ (off) |
Supplier Device Package: | TO-247 |
Package / Case: | TO-247-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Reverse Recovery Time (trr): | 400ns |
Test Condition: | 400V, 40A, 10 Ohm, 15V |
Td (on/off) @ 25°C: | 70ns/140ns |
Gate Charge: | 130nC |
Input Type: | Standard |
Series: | -- |
Power - Max: | 250W |
Vce(on) (Max) @ Vge, Ic: | 2.4V @ 15V, 40A |
Current - Collector Pulsed (Icm): | 200A |
Current - Collector (Ic) (Max): | 80A |
Voltage - Collector Emitter Breakdown (Max): | 600V |
IGBT Type: | Trench Field Stop |
Part Status: | Obsolete |
Packaging: | Tube |
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Introduction
The NGTB40N60IHLWG is a single insulated gate bipolar transistor, commonly known as an IGBT. IGBT transistors are similar to traditional MOSFETs, but with an additional gate pin that can be used to control the electrical potential of a second layer on the transistor body, making them significantly better suited to a variety of applications than a basic MOSFET. NGTB40N60IHLWG transistors are commonly used in applications such as power supply control, motor control, and in conjunction with other components for higher power switching.
Advantages over MOSFETs
IGBTs offer a number of advantages over traditional MOSFETs, including higher switching speed and less heat dissipation as a result of their two-layer design. The two-layer design of an IGBT also gives it an advantage over traditional MOSFETs when it comes to control. The additional gate pin makes it possible to control the voltage potential of the transistor\'s second layer, allowing for a second layer of control that can be used to further refine the output of the device.
Another advantage of IGBTs is their ability to handle higher power loads. IGBTs are able to handle higher levels of current due to their two-layer construction, making them well-suited to applications such as motor control, power supply control and other high-power switching applications.
Application Fields
NGTB40N60IHLWG transistors are typically used in applications that require higher switching speeds, more precise control, and higher power loads than traditional MOSFETs can provide. These applications include motor control, power supply control, and in conjunction with other components for higher power switching. These transistors are also used in a variety of other applications, from computing to consumer electronics.
Working Principle
The working principle of an NGTB40N60IHLWG transistor is similar to that of a traditional MOSFET. When a voltage is applied to the gate pin, an electric field is created in the semiconductor material of the transistor\'s second layer. This electric field allows the flow of electrons between the source and drain, making it possible to accurately control the transistor\'s output. As with a traditional MOSFET, the higher the voltage applied to the gate pin, the greater the flow of electrons, enabling the switch to be opened and closed with more precision. Additionally, the two-layer design of an IGBT makes it more capable of handling high power loads than a traditional MOSFET, as it is able to dissipate less heat and switch between states more quickly.
Conclusion
The NGTB40N60IHLWG is a single insulated gate bipolar transistor, commonly known as an IGBT. IGBT transistors offer a number of advantages over traditional MOSFETs, including higher switching speed and less heat dissipation. These transistors are typically used in applications that require higher switching speeds, more precise control, and higher power loads than traditional MOSFETs, such as motor control, power supply control and other high-power switching applications. The working principle of an NGTB40N60IHLWG transistor is similar to that of a traditional MOSFET; when a voltage is applied to the gate pin, an electric field is created in the transistor\'s second layer, allowing the flow of electrons between the source and drain and enabling the transistor to accurately control its output.
The specific data is subject to PDF, and the above content is for reference
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