NGTB50N60S1WG Discrete Semiconductor Products

Power - Max:	417W
Supplier Device Package:	TO-247-3
Package / Case:	TO-247-3
Mounting Type:	Through Hole
Operating Temperature:	-55°C ~ 175°C (TJ)
Reverse Recovery Time (trr):	94ns
Test Condition:	400V, 50A, 10 Ohm, 15V
Td (on/off) @ 25°C:	100ns/237ns
Gate Charge:	220nC
Input Type:	Standard
Switching Energy:	1.5mJ (on), 460µJ (off)
Series:	--
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 50A
Current - Collector Pulsed (Icm):	200A
Current - Collector (Ic) (Max):	100A
Voltage - Collector Emitter Breakdown (Max):	600V
IGBT Type:	Trench
Moisture Sensitivity Level (MSL):	--
Part Status:	Active
Lead Free Status / RoHS Status:	--
Packaging:	Tube

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Introduction

An integrated gate-commutated thyristor (IGCT) or NGTB50N60S1WG is a type of solid-state power switch. It is primarily used in high power applications for switching, phase angle control, and pulse-width modulation (PWM) applications, where target contacts must have a high current carrying capacity, fast switching time, and a high switching frequency. The NGTB50N60S1WG offers an attractive solution for these applications due to its advanced features and high power ratings.

Application Field

N GTB50N60S1WG IGBTs can be used in a wide variety of applications, including motors, drives, lighting, welding, industrial automation and robotics, telecommunication, and power utility systems. Some of the more notable applications of NGTB50N60S1WG IGBTs include induction heating, alternators, traction motors and applications involving the switching of high power capacitive loads. It is important to note that NGTB50N60S1WG IGBTs have higher gate power requirements than many of the other types of IGBTs, as well as a higher source-drain voltage (VSD) and higher power dissipation. This is due to their higher voltage ratings and high-current switching speeds. In order to maintain the high reliability it boasts, the NGTB50N60S1WG must be operated in a manner that maintains optimal operating conditions. To this end, it is critical to accurately design the gate drive circuit in order to prevent overvoltage, overcurrents, or thermal runaways that could potentially damage the IGBT.

Working Principle

N GTB50N60S1WG IGBTs operate on the principle of negative gate-source voltage (negative VGS). This means that when the voltage applied to the gate is negative with respect to the source, the transistor is opened from the on-state. Alternatively, when the voltage between the gate and source is positive, the transistor is forced into its on-state. In order for the NGTB50N60S1WG IGBT to turn on, a positive voltage must be applied to the gate. This creates a current that flows between the source and drain and the device is switched on. To turn the device off, the voltage applied to the gate is reversed and the device is switched back off. This fast switching speed enables the device to be used in applications where a high current rating is required in a short time. One of the main advantages of using NGTB50N60S1WG over other types of IGBTs is its ability to maintain a relatively low gate capacitance. This is important because it helps reduce the delay in switching times, making the device suitable for high-frequency applications. It is also important to note that like other types of IGBTs, the NGTB50N60S1WG must be driven with appropriate gate driver design and protection circuits to ensure proper operation and long-term reliability.

Conclusion

The NGTB50N60S1WG is a high-performance integrated gate-commutated thyristor (IGCT) that can be used in a wide variety of applications. It has a high current-carrying capacity, fast switching time and high switching frequency, making it ideal for high-power applications such as induction heating, alternators, and traction motors. The device operates on the principle of negative gate-source voltage and must be driven with an appropriate gate driver design and protection circuits to ensure proper operation and long-term reliability.

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