PDTC123YT,215 Discrete Semiconductor Products |
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Allicdata Part #: | 1727-6277-2-ND |
Manufacturer Part#: |
PDTC123YT,215 |
Price: | $ 0.02 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 250MW TO236AB |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC123YT,215 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.01990 |
6000 +: | $ 0.01796 |
15000 +: | $ 0.01561 |
30000 +: | $ 0.01405 |
75000 +: | $ 0.01249 |
150000 +: | $ 0.01041 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 35 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Power - Max: | 250mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | TO-236AB (SOT23) |
Base Part Number: | PDTC123 |
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Introduction to the PDTC123YT,215 application field and working principle
The PDTC123YT,215 is a BJT single pre-biased transistor in the bipolar transistors family. It is mainly used in automotive, telecommunications and consumer electronics applications and is known for its high precision and reliability. In this article, we will explore the application fields and working principle of the PDTC123YT,215.
Application fields of the PDTC123YT,215
The PDTC123YT,215 is mainly used in automotive, telecommunications, and consumer electronics applications. Automotive applications include motor control, speaker control, noise cancellation, and active power conversion circuits. It is suitable for high-frequency switching applications such as frequency hopping and high speed digital logic circuits. In telecommunications, it is used for analog circuit isolation and drivers. In consumer electronics, it is used for audio and video switching and conversion, as well as precision and power amplifier circuits.
Working Principle of the PDTC123YT,215
The PDTC123YT,215 is an NPN type transistor, and therefore it is made up of three layers of semiconductor material. The base region is made of a lightly doped P-type material, the collector is connected to a heavily doped N-type material, and the emitter is connected to a heavily doped P-type material. When the transistor is forward biased, the base-emitter junction is forward biased. When the base-emitter junction is forward biased, it allows the flow of current between the emitter and the collector, causing the transistor to conduct. This is the principle behind the operation of the PDTC123YT,215.
Pre-Biasing of the PDTC123YT,215
The PDTC123YT,215 is pre-biased, meaning that a small bias current is already applied to the transistor. This is done to reduce the drive current requirements for the transistor and improve its efficiency. The pre-bias helps to reduce switching losses, which are associated with the transitions between the OFF and ON states of the transistor. This pre-bias current is typically applied by means of a resistor connected between the base and the emitter of the transistor.
Conclusion
The PDTC123YT,215 is a single pre-biased transistor in the bipolar transistors family. It is mainly used in automotive, telecommunications and consumer electronics applications, where high precision and reliability is required. It operates on the principle of forward biasing the base-emitter junction, which allows the flow of current between the emitter and the collector, causing the transistor to conduct. This transistor is pre-biased, meaning the base current is already applied to the transistor. This pre-bias helps to improve efficiency and reduce switching losses, making the transistor well suited for high-frequency switching applications.
The specific data is subject to PDF, and the above content is for reference
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