PDTC123JE,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	2.2 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:	100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	150mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75
Base Part Number:	PDTC123

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Introduction

The PDTC123JE,115 is a pre-biased single bipolar junction transistor (BJT) that provides a wide range of essential characteristics to those applications and devices requiring high-performance transistor optimization. This high-performing device is ideal for circuits involving alphanumeric displays, intermediate frequency amplifier circuits, small and medium size switches, digital multiplexing, low-noise high frequency circuits, etc.

Technology Overview

The PDTC123JE,115 comes as an individual surface mount transistor with an extremely wide variety of applicable fields. It is compatible with standard discrete surface mount technology and is capable of working with surface mount soldered components. It is highly robust and provides higher reliability compared to other BJT alternatives. This transistor is mainly used in applications involving stabilized power supplies and frequency dependent characteristic parameters, such as Thyristor power supplies, frequency counters, etc., and equipment with constant current sources.

Features

This device features a range of built-in technological advancement that provides superior performance. It is available in a miniature easy-to-handle surface mount package which can be soldered directly onto the printed circuit board. It has a maximum collector-emitter voltage of 20V and a maximum collector current of 700mA. It has a low saturation voltage and a low noise input level. It has a very low power dissipation and low voltage capabilities. It also has a superior reverse leakage current and it offers better thermal stability.

Working Principle

The PDTC123JE,115 works with a pre-biased collector-emitter terminal. This means that the base-emitter junction is biased by the DC voltage while the collector-emitter junction is biased by the AC voltage. This combination of DC and AC voltage bias ensures that the transistor operates as an amplifier in the AC circuit. The PDTC123JE,115 operates with a base current, I B , and a collector current, I C . The base current controls the amount of collector current flowing through the device’s collector-emitter terminal, which in turn changes the overall device power. The collector-emitter voltage, V CE , determines the device’s operating frequency, gain, and noise performance.

Applications

The PDTC123JE,115 is suitable for a range of high-performance applications and circuits. These applications and circuits include, but are not limited to, DC motor and motor controllers, illuminators, pulse and pulse-width modulation, electronic watches, digital displays, electronic calculators, battery-powered devices, such as smart phones, PDAs, and portable games, radio and TV receivers, precision amplifiers, programmable logic devices, telephone systems, etc.

Conclusion

The PDTC123JE,115 is a reliable, high-performance single bipolar junction transistor with pre-biased collector-emitter terminals. It offers superior performance characteristics in comparison to other BJT devices and it provides a range of essential features suitable for a wide range of applications and circuits. This transistor is capable of high-frequency applications and is the ideal solution for power and frequency-dependent circuits in a wide variety of different systems and devices.

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