PDTC143XT,215 Allicdata Electronics
Allicdata Part #:

1727-1712-2-ND

Manufacturer Part#:

PDTC143XT,215

Price: $ 0.03
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW TO236AB
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC143XT,215 datasheetPDTC143XT,215 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.02488
6000 +: $ 0.02244
15000 +: $ 0.01952
30000 +: $ 0.01756
75000 +: $ 0.01561
150000 +: $ 0.01301
Stock 1000Can Ship Immediately
$ 0.03
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB (SOT23)
Base Part Number: DTC143
Description

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The PDTC143XT,215 is a single, pre-biased, bipolar junction transistor (BJT). This type of transistor is used in integrated circuits (ICs) to control the flow of current between two separate components. It acts as a switch, allowing or preventing the flow of current between its collector and emitter.

The PDTC143XT,215 offers a variety of features that make it attractive for use in a wide range of applications. It has a reliable forward current characteristic with a low saturation voltage and a good holding current, making it suitable for high-frequency switching applications. The device also has a high isolation voltage, making it suitable for use in high-voltage situations. Additionally, the device can be pre-biased, meaning that it does not require an external bias voltage for operation.

The PDTC143XT,215 is primarily used in power management applications. It can be used to regulate the current supplied to different circuits within an IC, allowing for more efficient power distribution. It can also be used in motor control applications, where it can act as an on/off switch for controlling current to the motor. The device is also used in radio frequency (RF) circuits, where it can be used to switch the bias voltage of tuned circuits.

The working principle of the PDTC143XT,215 is based on the principle of a junction field-effect transistor (JFET). A JFET consists of two opposing P-type and N-type materials, which form a “junction”. When an external voltage, known as the gate voltage, is applied to the junction, it causes a shift in the relative potential of the two materials. This shift causes a current to flow between the two materials, which can be adjusted by changing the gate voltage.

The PDTC143XT,215 is a two-terminal JFET. It has a collector, emitter, and gate terminal. The gate terminal is used to control the flow of current between the collector and emitter. When a positive gate voltage is applied, current flows between the collector and emitter, and when a negative gate voltage is applied, current is blocked. The device can be pre-biased, meaning that it can be used without an external bias voltage.

In summary, the PDTC143XT,215 is a single, pre-biased, bipolar junction transistor (BJT). It is primarily used in power management applications, motor control applications, and radio frequency (RF) circuits. The device works on the principle of a junction field-effect transistor, utilizing a gate voltage to control the flow of current between a collector and an emitter.

The specific data is subject to PDF, and the above content is for reference

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