PDTC143TMB,315 Allicdata Electronics
Allicdata Part #:

PDTC143TMB,315-ND

Manufacturer Part#:

PDTC143TMB,315

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 250MW 3DFN
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC143TMB,315 datasheetPDTC143TMB,315 Datasheet/PDF
Quantity: 1000
10000 +: $ 0.05332
Stock 1000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Supplier Device Package: 3-DFN1006B (0.6x1)
Base Part Number: DTC143
Description

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The PDTC143TMB,315 is a bipolar junction transistor (BJT) that is specifically designed for pre-biased applications. It is a single transistor type and is commonly used in audio and low-frequency applications.

The PDTC143TMB,315 is an NPN bipolar junction transistor, specifically designed for pre-biased operation. It can be used as either a switch or an amplifier, and is designed to operate with a collector-base voltage greater than the base-emitter voltage. This pre-biased operation improves the performance of the device compared to conventional NPN transistors. The PDTC143TMB,315 has a wide variety of applications, such as amplifying, switching, signal processing, and signal conditioning.

The working principle of the PDTC143TMB,315 is based on the basic principles of bipolar junction transistors (BJTs). A BJT is a semiconductor device composed of three layers of different conductivity materials, each with a voltage bias. When a voltage is applied to the base layer, it creates an electric field that attracts electrons to the base. This then forms a current path (known as the collector-base current) between the collector layer and the base layer. This current path creates a voltage drop across the collector-base barrier and results in current flowing between the collector and the emitter.

The PDTC143TMB,315 has a wide variety of applications. It can be used as an amplifier, a switch, a signal processor, or a signal conditioner. It is commonly used in audio and low-frequency applications, as well as instrumentation, power supplies, and power switching applications. The device is highly reliable, with a rated life of over 10,000 hours.

The PDTC143TMB,315 is a reliable and versatile device for many different applications. Its pre-biased operation allows for improved performance compared to other bipolar junction transistors. It is an excellent choice for a wide variety of applications, such as audio and low-frequency applications, as well as instrumentation and power supplies. The device is highly reliable, with a rated life of over 10,000 hours.

The specific data is subject to PDF, and the above content is for reference

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