PDTC123JU,115 Allicdata Electronics
Allicdata Part #:

1727-1707-2-ND

Manufacturer Part#:

PDTC123JU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC123JU,115 datasheetPDTC123JU,115 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
3000 +: $ 0.01990
6000 +: $ 0.01796
15000 +: $ 0.01561
30000 +: $ 0.01405
75000 +: $ 0.01249
150000 +: $ 0.01041
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Resistor - Emitter Base (R2): 47 kOhms
Base Part Number: PDTC123
Supplier Device Package: SOT-323-3
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Power - Max: 200mW
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Series: --
Resistor - Base (R1): 2.2 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: NPN - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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PDTC123JU,115 Transistor - Bipolar (BJT) - Single, Pre-Biased

The PDTC123JU,115 is a single, Pre-Biased Bipolar Junction Transistor (BJT) from Vishay Intertechnology. This is a three-terminal, NPN complement bipolar transistor featuring a high current gain. It is a surface-mount package housed in a SOT-23 package, and is ideal for low-power, low-voltage applications.

This transistor has a very low voltage rating of 2.7 V. This makes it suitable for applications such as voltage regulators and motor control circuitry. Due to its high current gain, the PDTC123JU,115 can also be used in higher-power applications like audio amplifying and switching circuits. The datasheet also states that it can be used as a power switch in automotive electronics applications.

The base of the PDTC123JU,115 is connected to the output voltage rail (VCC) through a resistor. This connection is referred to as pre-biasing and helps to reduce the amount of energy required for the transistor to switch. This helps improve overall efficiency and reduces power consumption.

The PDTC123JU,115 also has very good temperature operation and power dissipation ratings. It can operate in temperatures ranging from -40°C to 125°C, and has a maximum power dissipation of 500 mW. This makes it suitable for use in a wide range of applications where temperature operation and power dissipation are key considerations.

In summary, the PDTC123JU,115 is a high-performance single, Pre-Biased Bipolar Junction Transistor (BJT) from Vishay Intertehcnology. This three-terminal, NPN complement bipolar transistor features high current gain and a low voltage rating. It is housed in a SOT-23 package, and is ideal for low-power, low voltage applications, such as voltage regulators, motor control circuitry and audio applications.

The specific data is subject to PDF, and the above content is for reference

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