PDTC124EU,135

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	22 kOhms
Resistor - Emitter Base (R2):	22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	100nA
Frequency - Transition:	230MHz
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PDTC124

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Introduction

PDTC124EU,135 transistors are a type of bipolar junction transistors (BJTs) designed to work in single, pre-biased applications. Built with NPN technology, these BJTs offer a high current gain (hFE), wide temperature range and fast switching times, making them suitable for a range of applications such as automotive and consumer electronics.

Applications of PDTC124EU,135

PDTC124EU,135 transistors are primarily used for power switching and current amplification. The wide temperature range and fast switching times make them well-suited for applications in the automotive and consumer electronics industries. In automotive applications, they are used to control fuel pumps, lights, and radio frequencies, while in consumer electronics they can control LCDs or power audio amplifiers.

Working Principle of PDTC124EU,135

PDTC124EU,135 transistors work by controlling the electric current through semiconductor material by the application of a small amount of electric current. This small amount of electric current can then be used to control larger electric currents such as those that are used in automotive or consumer electronics applications.The mechanism of operation is based on the principle of electrical amplification, in which a small amount of energy applied to the base (gate) of the transistor is amplified to a larger amount at the collector (output) end. The amount of amplification is determined by the transistor’s current gain value (hFE), which is determined by the number of electrons that are allowed to flow into or out of the base.

Advantages of PDTC124EU,135

PDTC124EU,135 transistors have a number of advantages over other types of transistors. Most notably, they offer a high current gain (hFE), wide temperature range and fast switching times, making them well-suited for a range of automotive and consumer electronics applications. In addition, these transistors are renowned for their excellent high frequency response, allowing them to amplify small electrical signals without introducing noise or causing interference. This makes them suitable for applications that require precise signal amplification, such as medical devices or precision instruments.In addition, these transistors have a wide operational temperature range, which allows them to operate reliably even in extreme temperatures. This makes them ideal for applications where high temperatures may be encountered, such as those found in automotive or aerospace engineering.

Conclusion

PDTC124EU,135 transistors are a type of pre-biased bipolar junction transistors (BJTs) designed to work in single applications. They offer a high current gain (hFE), wide temperature range and fast switching times, making them well-suited for applications in the automotive and consumer electronics industries. Their excellent high frequency response, wide operational temperature range, and low noise levels make them ideal for applications that require precise signal amplification, as well as applications that may encounter extreme temperatures.

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