PDTC114TU,115 Discrete Semiconductor Products |
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| Allicdata Part #: | 1727-5133-2-ND |
| Manufacturer Part#: |
PDTC114TU,115 |
| Price: | $ 0.02 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Nexperia USA Inc. |
| Short Description: | TRANS PREBIAS NPN 200MW SOT323 |
| More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
| DataSheet: |  PDTC114TU,115 Datasheet/PDF |
| Quantity: | 3000 |
| Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| 3000 +: | $ 0.01990 |
| 6000 +: | $ 0.01796 |
| 15000 +: | $ 0.01561 |
| 30000 +: | $ 0.01405 |
| 75000 +: | $ 0.01249 |
| 150000 +: | $ 0.01041 |
Specifications
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Lead Free Status / RoHS Status: | -- |
| Part Status: | Active |
| Moisture Sensitivity Level (MSL): | -- |
| Transistor Type: | NPN - Pre-Biased |
| Current - Collector (Ic) (Max): | 100mA |
| Voltage - Collector Emitter Breakdown (Max): | 50V |
| Resistor - Base (R1): | 10 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic: | 150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max): | 1µA |
| Power - Max: | 200mW |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | SOT-323-3 |
| Base Part Number: | PDTC114 |
Description
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The PDTC114TU,115 are single bipolar Junction Transistors (BJT) that are pre-biased. A bipolar transistors works by applying a voltage across its two base junctions, which causes an electron to draw current from one side of the base to the other. This current flow is used to control the current going through the collector and the emitter. The PDTC114TU,115 are designed for low power applications and are pre-biased, which means that a voltage is already applied across their base junctions so that no extra power supply is needed to get them to work. The PDTC114TU,115 can be used in a variety of applications, such as amplifiers, switches, and rectifiers. In amplifiers, they can be used to increase the gain, or the amount of current coupled between the input and output. They can also be used as switches to control current flow, or as rectifiers to convert alternating current (AC) to direct current (DC). The PDTC114TU,115 have a breakdown voltage of 10V, which means that the maximum voltage it can withstand before experiencing permanent damage is 10V. They also have a low power consumption of 5mW, so they can be used for low power applications. Their other features include a max collector current of 300mA and a max collector-emitter voltage of 30V. The PDTC114TU,115 have a fast switching response time, which makes them ideal for use in high speed applications. The fast switching speed of the PDTC114TU,115 makes them suitable for use in switching power supplies, which require the fast response time of a transistor and the low power consumption of the PDTC114TU,115.The PDTC114TU,115 also have a low gate leakage current, which helps to prevent current leakage that can cause malfunction and damage to the circuit. The PDTC114TU,115 are reliable and durable and are able to withstand temperature ranges ranging from -40 to +85 degrees Celsius.Overall, the PDTC114TU,115 is an ideal pre-biased bipolar Junction Transistor for use in low power applications, such as amplifiers, switches and rectifiers. Its low power consumption, fast switching speed, and low gate leakage current make it a reliable and durable choice for circuit designers.
The specific data is subject to PDF, and the above content is for reference
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