Allicdata Part #: | PDTC143XQAZ-ND |
Manufacturer Part#: |
PDTC143XQAZ |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Nexperia USA Inc. |
Short Description: | TRANS PREBIAS NPN 3DFN |
More Detail: | Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias... |
DataSheet: | PDTC143XQAZ Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.02514 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 100mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 1µA |
Frequency - Transition: | 230MHz |
Power - Max: | 280mW |
Mounting Type: | Surface Mount |
Package / Case: | 3-XDFN Exposed Pad |
Supplier Device Package: | DFN1010D-3 |
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The PDTC143XQAZ is a type of transistor, categorized as Single, Pre-Biased Bipolar Junction Transistor (BJT). It is widely used in various electrical and electronic applications since it has a number of useful characteristics, including higher current and voltage capability, increased reliability and performance, and greater circuit flexibility.
The PDTC143XQAZ has an internal construction of three layers. Its common base is made from a semiconductor material, usually silicon, and the other two layers, known as the collector and the emitter, are made from different conducting materials. The collector and emitter layers are joined to the base by one or more junctions and form a p-n junction. The transistor\'s base has a high impedance, which is essential for its functioning.
The PDTC143XQAZ is a pre-biased single transistor, which means that it is already partially activated by an applied voltage before turning on. This kind of setup significantly reduces the time it takes for the transistor to start working, as well as surge currents.
When power is applied to the PDTC143XQAZ, electrons start to flow towards the collector. This sets up an electric field across the junction between the emitter and the collector, and thus the transistor is activated. The electric field sets up a voltage across the base, which increases its potential and creates a current flow. This current flow creates a second electric field, which is higher than the first, and causes the transistor to enter into its active state.
The PDTC143XQAZ is mainly used in switching applications, such as rectifiers, motor controllers, and motor control circuits. It is also used for low frequency amplifications and for voltage and current converting applications.
The PDTC143XQAZ transistor has several advantages over other types of transistors. It has a higher current and voltage capability, which allows the device to handle higher power levels with greater reliability. It also has a faster response time and can operate at lower temperatures. It also provides a higher level of circuit protection, as it is less prone to thermal runaway.
In summary, the PDTC143XQAZ is a type of single pre-biased bipolar junction transistor (BJT). It has a high impedance base, which is essential for its functioning, and is widely used in various electrical and electronic applications. It has a number of advantages over other types of transistors, such as a higher current and voltage capability, increased reliability and performance, and greater circuit flexibility.
The specific data is subject to PDF, and the above content is for reference
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