PDTC144TU,115

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:	150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):	1µA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-70, SOT-323
Supplier Device Package:	SOT-323-3
Base Part Number:	PDTC144

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PDTC144TU,115 application field and working principle

Introduction

PDTC144TU,115 is a pre-biased single bipolar junction transistor (BJT) used as a signal amplifier and switching device. It features two emitter-to-collector breakdown voltage BVEC and two base-to-collector breakdown voltage BVBC. The PDTC144TU,115 is manufactured using advanced silicon epitaxy, which provides superior temperature stability, high gain and fast switching.

Features

PDTC144TU,115 has the following features:

• Emitter-to-collector breakdown voltage (BVEC): 80V.
• Base-to-collector breakdown voltage (BVBC): 40V.
• High gain and fast switching.
• High collector current capability.
• Low noise.
• High current-gain cutoff frequency.
• High power dissipation.
• Built-in ESD protection.

Applications

The PDTC144TU,115 is commonly used in the following applications:

• Low-noise signal amplifiers and drivers.
• High-frequency switching circuits.
• Motor control circuits.
• Duty cycle timer (>100kHz).
• Synchronous motor starters.
• Switching regulators.

The PDTC144TU,115 is suitable for automated assembly processes such as SMD pick & place.

Working Principle

The PDTC144TU,115 is a PNP type bipolar junction transistor (BJT) with two emitter-to-collector breakdown voltage BVEC and two base-to-collector breakdown voltage BVBC. The principle behind the operation of this device is as follows:When a voltage is applied to the base, it creates an electric field which induces an electric current into the emitter-collector region, resulting in a current flow across the emitter-collector region. The collector current is proportional to the applied voltage and the current flow can be increased or decreased by changing the base voltage. This type of transistor is also known as an avalanche transistor due to its capability to amplify currents that are well beyond the normal levels.When the transistor is used as a switch, the output voltage is either close to ground or close to the supply voltage. The output voltage can also be adjusted by changing the base voltage.

Conclusion

The PDTC144TU,115 is a pre-biased single bipolar junction transistor (BJT) used as a signal amplifier and switching device. It features two emitter-to-collector breakdown voltage (BVEC) and two base-to-collector breakdown voltage (BVBC). The PDTC144TU,115 is suitable for a wide range of applications such as low-noise signal amplifiers and drivers, high-frequency switching circuits, motor control circuits, duty cycle timer (>100kHz), synchronous motor starters and switching regulators. The principle behind the operation of this device is that when a voltage is applied to the base, it creates an electric field which induces an electric current into the emitter-collector region, resulting in a current flow across the emitter-collector region.

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