PDTC115EU,115 Allicdata Electronics
Allicdata Part #:

PDTC115EU,115-ND

Manufacturer Part#:

PDTC115EU,115

Price: $ 0.02
Product Category:

Discrete Semiconductor Products

Manufacturer: Nexperia USA Inc.
Short Description: TRANS PREBIAS NPN 200MW SOT323
More Detail: Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Bias...
DataSheet: PDTC115EU,115 datasheetPDTC115EU,115 Datasheet/PDF
Quantity: 1000
3000 +: $ 0.01990
Stock 1000Can Ship Immediately
$ 0.02
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 20mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SOT-323-3
Base Part Number: PDTC115
Description

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Bipolar Junction Transistors (BJTs), also known as "electronic switches," are used to electronically control the flow of current between multiple circuits. The PDTC115EU is a single, pre-biased BJT, which is used to amplify or switch electronic signals. It has been widely used in a variety of industries, such as telecommunications and automotive applications.

The PDTC115EU is a PNP, or Positive-Negative-Positive, transistor. It has three terminals, called the emitter, base, and collector. The emitter is the negative charged voltage source, while the collector is the positive voltage source. The base is the in-between terminal, and it is where current passes from the emitter to the collector. The amount of current is determined by the amount of applied voltage on the base.

When the applied voltage to the base is zero, the transistor will act as an open circuit and no current will flow through it. When the applied voltage to the base is high enough, the transistor will act as a closed circuit and act as an amplifier. The gain of the transistor is defined by the ratio between the applied voltage to the base and the output current from the collector.

The PDTC115EU is a single pre-biased BJT, meaning that it is pre-biased to a specific voltage level by the manufacturer. This type of BJT is used a lot in devices where a stable bias voltage is required, such as analog amplifiers and digital logic circuits.

The PDTC115EU is widely used in common applications, such as amplifiers, switches, current sources, and voltage regulators. It is also used in specialized applications such as low noise amplifiers and remote-control circuits. It is often used in telecommunications devices to amplify signals, as well as in automotive applications to control engine speeds.

The PDTC115EU’s working principle is based on a phenomenon known as “current gain”, wherein a small amount of current applied to the base of the transistor causes a larger amount of current to flow from the collector. This gain can be determined by the transistor’s current gain factor, or hfe. The higher the hfe, the greater the current gain of the transistor.

In summary, the PDTC115EU is a single pre-biased BJT used for a variety of purposes in both consumer and industrial applications. Its applications range from amplifiers, switches, and voltage regulators to low-noise amplifiers and engine-control systems. The device works by using a small amount of current applied to its base to generate a larger current flow from its collector, which is determined by its current gain factor or hfe.

The specific data is subject to PDF, and the above content is for reference

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