Allicdata Part #: | R6025FNZ1C9-ND |
Manufacturer Part#: |
R6025FNZ1C9 |
Price: | $ 5.07 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | MOSFET N-CH 600V 25A TO247 |
More Detail: | N-Channel 600V 25A (Tc) 150W (Tc) Through Hole TO-... |
DataSheet: | R6025FNZ1C9 Datasheet/PDF |
Quantity: | 965 |
1 +: | $ 4.60530 |
10 +: | $ 4.11138 |
100 +: | $ 3.37144 |
500 +: | $ 2.73007 |
1000 +: | $ 2.30246 |
Vgs(th) (Max) @ Id: | 5V @ 1mA |
Package / Case: | TO-247-3 |
Supplier Device Package: | TO-247 |
Mounting Type: | Through Hole |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 150W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 3500pF @ 25V |
Vgs (Max): | ±30V |
Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 12.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 25A (Tc) |
Drain to Source Voltage (Vdss): | 600V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Not For New Designs |
Packaging: | Tube |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The R6025FNZ1C9 is a single, high-efficiency N-Channel MOSFET device designed to help minimize conduction and switching losses while delivering high efficiency and reduced noise and EMI. It is a surface-mount device that can be used in a variety of applications.
The R6025FNZ1C9 is capable of being operated in a low gate-drive type configuration and the applications of this MOSFET device are vast. This device is suitable for DC and AC power cycle control, soft starting, overload protection, switching mode power supplies, overcurrent protection, and more.
Working Principle
The working principle of the R6025FNZ1C9 is mainly based on its MOSFET nature. The device consists of series connected source and drain regions. The source is connected to the drain through a thin insulator, which is also known as the gate oxide. When a voltage is applied to the gate, it induce carriers into the channel between the source and drain and create a conducting channel. This will in turn enable current to pass through the device.
The operation of a MOSFET is based on the principle of transistor action, in which the channel resistance of the device is controlled by a signal applied to the gate electrode. This makes them ideal for low to moderate power applications, where efficiency and noise reduction are important features.
Application Fields
The R6025FNZ1C9 is suitable for a broad range of applications such as DC and AC power cycle control, soft starting, overload protection, overcurrent protection, and more. This device can also be used in switching mode power supplies, motor drivers, and lighting systems. The device is particularly suitable for applications that require low gate-drive currents and high efficiency. In addition, the device can operate at high frequencies and can be used for PC logic and solenoid control.
The R6025FNZ1C9 is also suitable for automotive applications, such as Keyless Entry and Start systems as well as Push Button Start/Ignitions and Electronic Brake control systems. Furthermore, the device is ideal for applications that require low on-resistance and robust protection against overloads and short circuits.
The R6025FNZ1C9 is a versatile device that can be used in a variety of applications. The device features high efficiency and robust protection features, which make it a suitable choice for a wide range of different applications.
The specific data is subject to PDF, and the above content is for reference
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