| Allicdata Part #: | SI4465ADY-T1-GE3TR-ND |
| Manufacturer Part#: |
SI4465ADY-T1-GE3 |
| Price: | $ 0.68 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Vishay Siliconix |
| Short Description: | MOSFET P-CH 8V 8SOIC |
| More Detail: | P-Channel 8V 3W (Ta), 6.5W (Tc) Surface Mount 8-S... |
| DataSheet: |  SI4465ADY-T1-GE3 Datasheet/PDF |
| Quantity: | 5000 |
| 2500 +: | $ 0.61619 |
Specifications
| Series: | TrenchFET® |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| FET Type: | P-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 8V |
| Current - Continuous Drain (Id) @ 25°C: | -- |
| Drive Voltage (Max Rds On, Min Rds On): | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs: | 9 mOhm @ 14A, 4.5V |
| Vgs(th) (Max) @ Id: | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 85nC @ 4.5V |
| Vgs (Max): | ±8V |
| FET Feature: | -- |
| Power Dissipation (Max): | 3W (Ta), 6.5W (Tc) |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SO |
| Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Description
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The SI4465ADY-T1-GE3 is a three-terminal N-channel enhancement mode logic level field-effect transistor (FET) with a low gate voltage (VGS(th)) of 3V (max). It is manufactured using a silicon gate and fabricated on a Trench MOSFET process, which offers low gate charge, low operating and switching times, and low on-resistance. This device can be used in many applications with different power levels, from ultra low-power to high-power applications.The SI4465ADY-T1-GE3 is primarily used in circuit protection applications. It can be used as a protection switch between the power source and the load, which helps to protect the load from high voltage or current. It can also be used in power circuits to control power distribution between different loads.Its most notable features include low RDS (on), fast switching times, small form factor, and large power handling capabilities. The device is available in small outline IC packages and is RoHS compliant.The SI4465ADY-T1-GE3 operates by relying on the depletion region created by the gate voltage. By controlling the voltage applied to the gate, this depletion region can be used to change the resistance of the channel between the source and drain, allowing for control over the channel current. This represents the fundamental operation of a MOSFET (metal–oxide–semiconductor field-effect transistor).The device provides excellent performance in broad ranges of power levels. It is mainly used in power circuits, but it can be used in many other applications where low resistance and good electrical characteristics are required. For example, it can be used in power management circuits to power various load requirements. It can also be used in the protection of load circuits from overcurrent and overvoltage conditions. This device can be used in low-power to mid-power applications with a VGS(th) of 3V (max). It offers excellent ESD protection, low gate charge, and low on resistance. It has a low gate input capacitance and a maximum of 24V drain-source voltage for high level of performance. The device has a maximum peak current of 28A, a drain capacitance of 3.2nF, a Ton (turn-on time) of 39ns, and a Toff (turn-off time) of 24ns. It is RoHS compliant and is available in the DFN package.In summary, the SI4465ADY-T1-GE3 is a three-terminal N-channel enhancement mode logic level field-effect transistor (FET). It is mainly used in circuit protection applications, but can be used in other applications as well. It has a low VGS(th), low gate input capacitance, and low gate charge, making it ideal for high-power applications. It also boasts fast switching times and a low on-resistance, making it ideal for low-power applications. Its RoHS compliance and small form factor make it an attractive choice for many applications.The specific data is subject to PDF, and the above content is for reference
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