Allicdata Part #: | SI4490DY-T1-E3TR-ND |
Manufacturer Part#: |
SI4490DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET N-CH 200V 2.85A 8-SOIC |
More Detail: | N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount... |
DataSheet: | SI4490DY-T1-E3 Datasheet/PDF |
Quantity: | 2500 |
Vgs(th) (Max) @ Id: | 2V @ 250µA (Min) |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1.56W (Ta) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 10V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 4A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.85A (Ta) |
Drain to Source Voltage (Vdss): | 200V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4490DY-T1-E3 is an N-Channel MOSFET transistor in the single series, manufactured by Vishay. It is designed for high-performance, self-oscillating gate drive applications requiring high switching speeds, low current drive and high-temperature operation. This transistor is suitable for applications such as high-current drive, low-voltage switching and voltage-controlled power supply.
As with any transistor, the SI4490DY-T1-E3 has three main pins: a Gate pin, a Drain pin and a Source pin. The Gate pin is used to provide the electrical signal which switches the transistor on and off. The Drain pin allows current to flow to the transistor, while the Source pin sends current away from the transistor.
The SI4490DY-T1-E3 can be used in a variety of fields, most notably as a driver in high speed switching applications. These applications include automotive shunt transistors, motor drivers and drivers with pulse width modulation (PWM). The SI4490DY-T1-E3 is especially well-suited to driving high frequency switching motors as it is able to handle high power losses without becoming too hot. This helps to ensure the longevity of the application by reducing overall heat buildup.
The SI4490DY-T1-E3 works on the principle of an N-channel MOSFET, which is a type of metal-oxide-semiconductor field-effect transistor. This means that the transistor has an insulated gate which is connected to a conductive channel, or pathway, between the Source and Drain pins. The Gate pin receives electrical signals, allowing the current to flow between the Source and Drain pins. When the Gate pin is switched off, the current is blocked from flowing.
In order to ensure high performance, the transistor needs to be driven with a special gate drive circuit. This gate drive circuit is capable of providing very fast switching times, low drive current and a high temperature operating range. The gate drive circuit requires careful design, as the wrong design will cause the transistor to overheat and eventually fail.
The SI4490DY-T1-E3 is an ideal transistor for applications which require fast switching speeds, low current drive and high-temperature operation. Its ability to handle high power losses without becoming too hot makes it ideal for high frequency switching applications. With careful design and implementation, the SI4490DY-T1-E3 can provide reliable performance for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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