SI4459BDY-T1-GE3

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The SI4459BDY-T1-GE3 is a N-Channel Logic Level MOSFET with an Avalanche Safe Operating Area (AOSA). It is part of the Vishay Siliconix SI4459 series of Field-Effect Transistors (FETS). This particular version of the MOSFET is rated at 19V Drain-Source Breakdown Voltage and also has an On Resistance of 15 mΩ (Max). Furthermore, this version is optimized for high power applications and is able to support up to 6A at 75°C.

Application field

The SI4459BDY-T1-GE3 MOSFET is a versatile component that can be used in a variety of applications. From power management and motor drives to switching circuits, this FET is designed to meet the requirements of most applications. It is particularly suitable for applications that require high voltage and current levels, such as high-efficiency DC-DC conversion, DC motor drives, and automotive applications. Furthermore, this MOSFET can be used in systems that require low input current and efficient power savings, such as switch-mode power supplies and regulated power supply circuits.

Working principle

The SI4459BDY-T1-GE3 is a single-gate, N-channel MOSFET. It has two terminals, a gate and a drain. When a voltage is applied to the gate, it attracts electrons from the drain, which form a conductive channel to the source. This process is known as “inversion” and is the basic principle of FET operation.

To increase current output, the gate voltage must be increased. Therefore, in applications where high current levels are needed, an increased gate voltage can be applied. However, increasing the gate voltage also increases the drain-source resistance. In order to maintain a low resistance, power MOSFETs, such as the SI4459BDY-T1-GE3, are designed with low on-resistance.

To further ensure a low-resistance path, the gate voltage should be applied with a short rise time. This helps minimize the drain voltage drop, which can cause problems such as excessive power dissipation and overheating.

Current flow control

The SI4459BDY-T1-GE3 has a built-in current limiting feature, allowing it to control the amount of current flowing through the drain. This helps prevent excessive power dissipation and maintain system stability. The current limit can be adjusted by applying a voltage to the gate.

One of the key advantages of using this type of FET is its low gate-source capacitance. Low capacitance results in faster switching times, which reduces the amount of power wasted in the system. This helps maintain system efficiency.

Avalanche Safe Operating Area

The SI4459BDY-T1-GE3 has an Avalanche Safe Operating Area (AOSA). This feature prevents charge from accumulating in the channel of the FET, resulting in a short-circuit condition. In the event of an avalanche, the voltage is clamped by the device and the drain current is limited. This helps prevents excessive power dissipation and helps maintain circuit reliability.

Conclusion

The SI4459BDY-T1-GE3 is a single-gate N-channel MOSFET designed for high power applications. It has an on-resistance of 15 mΩ (max) and is rated for 19V drain-source breakdown voltage. Furthermore, it has an Avalanche Safe Operating Area which helps protect the circuit from excessive and unexpected power dissipation. This FET is suitable for power management, motor drives, and switching circuits, as well as high-efficiency DC-DC conversion and DC motor drives.

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