SI4900DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4900DY-T1-E3TR-ND

Manufacturer Part#:

SI4900DY-T1-E3

Price: $ 0.41
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2N-CH 60V 5.3A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surf...
DataSheet: SI4900DY-T1-E3 datasheetSI4900DY-T1-E3 Datasheet/PDF
Quantity: 15000
1 +: $ 0.41000
10 +: $ 0.39770
100 +: $ 0.38950
1000 +: $ 0.38130
10000 +: $ 0.36900
Stock 15000Can Ship Immediately
$ 0.41
Specifications
Vgs(th) (Max) @ Id: 3V @ 250µA
Base Part Number: SI4900
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 3.1W
Input Capacitance (Ciss) (Max) @ Vds: 665pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Series: TrenchFET®
Rds On (Max) @ Id, Vgs: 58 mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 60V
FET Feature: Logic Level Gate
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SI4900DY-T1-E3 is an array of FETs, aka field effect transistors. This particular one is a MOSFET, and is known for its low power consumption and fast switching speeds. This makes it ideal for a variety of applications, including high frequency switching, power management, and analog signal processing.

A field effect transistor is a three-terminal device that has the base, drain, and source. The base is controlled and is used to control the current flow between the drain and source. When the base voltage is high, the current between the drain and source is maximized and vice versa. The SI4900DY-T1-E3 can be used in all three of these modes depending on the application.

When it comes to application field and working principle, the SI4900DY-T1-E3 is typically used in applications that require a low power consumption and fast switching speeds. This means that they are often used in high-frequency switching applications, power management circuits, and analog signal processing. These applications require that the current be quickly shuttled between the drain and source, which the SI4900DY-T1-E3 can do with its fast switching speeds.

The SI4900DY-T1-E3 is also used in power management circuits. These circuits are used to maintain an efficient flow of power from the battery to the other components in the device. By controlling the base voltage of the FET, the current can be quickly switched to provide the most efficient path. This can be used to reduce the amount of power being wasted, saving energy and extending battery life.

Analog signal processing is another important application for the SI4900DY-T1-E3. This type of processing requires a device that can switch quickly between two different states. By changing the base voltage, the FET can rapidly switch between two different states, which is ideal for this type of signal processing.

The SI4900DY-T1-E3 is an excellent choice for a variety of different applications, as it offers low power consumption, fast switching speeds, and a versatile three-terminal device. This makes it ideal for high-frequency switching applications, power management, and analog signal processing. With its unique combination of features, the SI4900DY-T1-E3 is an excellent choice for any application requiring a reliable, cost-effective solution.

The specific data is subject to PDF, and the above content is for reference

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