SI4967DY-T1-GE3

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The SI4967DY-T1-GE3 is a three transistor N-channel monolithic dual gate field effect transistor (FET) array device. It is a low power type of field effect transistor (FET) which is widely used as an audio amplifier in many consumer electronic products, such as car stereos, home theater systems, and portable audio players. This versatile array device offers several features not available with traditional FETs, such as dual gate effectiveness and low gate leakage currents. In addition, it is able to perform switching functions faster than traditional FETs, making it an ideal choice for high speed applications such as computer memory and graphic accelerator circuits.

The SI4967DY-T1-GE3’s N-channel technology provides high input impedance and low input capacitance, along with high current drive capability when compared to other types of FETs. The dual gate nature of the device offers excellent thermal stability and high frequency response, making it ideal for use in high frequency applications. It features a two-finger style gate which minimizes gate-to-source capacitance and improves performance when used in large signal applications. Other features include a low avalanche breakdown voltage, low gate input capacitance, and low reverse transfer capacitance for improved signal quality.

The SI4967DY-T1-GE3’s working principle involves the flow of electrons between the source and the drain of the FET, with the current being controlled by the voltage applied to the gate terminals. When a positive voltage is applied to the gate terminal, it causes the conductivity of the channel to increase, allowing current to flow between the source and drain. This can be used to control the flow of current to and from the load, allowing for precise control of current flow. When a signal is applied to the gate terminal, it affects the conduction of electrons and can cause the FET to switch either on or off, depending on the voltage applied.

The SI4967DY-T1-GE3 is an ideal component for use in audio amplifiers, video signal switching, digital logic circuits, and other high speed switching or high voltage applications. Its superior thermal stability and dual gate effectiveness make it a superior choice for many applications, and its wide range of features make it suitable for many different applications. With its high level of performance, dependability, and low power consumption, the SI4967DY-T1-GE3 is a perfect choice for many applications requiring a reliable, high performance FET array device.

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