SI4925DDY-T1-GE3

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The SI4925DDY-T1-GE3 is a MOSFET array designed with multiple transistors mounted together in a single package. It can be used in applications requiring the switching of multiple circuit elements quickly and reliably, making it highly effective and versatile.The SI4925DDY-T1-GE3 is a 4-channel, low-capacitance, logic-level power MOSFET array. It consists of four N-channel, enhancement-mode MOSFETs with a peak voltage rating of 50V and a continuous current rating of 5A. The device offers an on-state resistance of 0.5R and an off-state resistance of 40K. It also provides a low-voltage level control voltage range of 2.0V-5.5V and a logic level threshold voltage of 2.0V.The device is particularly well-suited for use in high-speed switching applications such as buck-boost converters and switching power supplies. The array\'s multi-channel, low-voltage operating characteristics, low-capacitance, and low-on-resistance enable the device to provide higher efficiency, low power dissipation, and high frequency operation. The device can also be used in high-temperature and high-humidity applications due to its wide operating temperature range of -55°C to 125°C.The SI4925DDY-T1-GE3\'s working principle revolves around a capacitive switching method. This switching method is based on the idea that when a voltage is applied across two different materials, the capacity between them will change, resulting in a change in voltage. This change in voltage causes the gate of the MOSFET to turn on or off. When the gate is on, the MOSFET can conduct current, allowing it to switch multiple circuit elements quickly and reliably.The device also employs an active protection system that provides a failsafe environment for the transistor array. This system monitors the voltage of the gate source and prevents electrical current overloads that could damage the MOSFETs. The active protection auto-opens when the voltage reaches a certain level; this prevents collateral damage to any other part of the device.In conclusion, the SI4925DDY-T1-GE3 is a versatile and efficient MOSFET array suitable for high-speed switching applications. It consists of four enhancement-mode MOSFETs with a peak voltage rating of 50V and a continuous current rating of 5A. The device provides an on-state resistance of 0.5R and an off-state resistance of 40K. It also offers a low-voltage level control voltage range of 2.0V-5.5V and a logic level threshold voltage of 2.0V, and a wide operating temperature range of -55°C to 125°C. Additionally, it has an active protection system that provides a failsafe environment for the transistor array. The SI4925DDY-T1-GE3 is a great choice for cost-effective and fast switching performance.

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