SI4946CDY-T1-GE3

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The SI4946CDY-T1-GE3 is a field effect transistor (FET) array manufactured by Vishay Semiconductor. The bi-directional load switch FET array features N-channel MOSFETs and is commonly used in power management applications, such as in battery and DC/DC power supplies, voltage regulators, and other high-current switches. As the FET array can be configured with three different gate-source voltages and three different drain-source voltage levels, it is an excellent choice for a variety of power management applications.

The SI4946CDY-T1-GE3 is a three-channel array of FETs (field-effect transistors) manufactured with N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) technology. The device is designed for use as a bi-directional load switch in a variety of power management applications, such as DC/DC converters, voltage regulators, power supplies, and other high-current switches. The array is able to be configured with three different gate-source voltages and three different drain-source voltage levels, allowing engineers to customize the device for different applications. The device offers two N-channel enhancement-mode FETs and one P-channel enhancement-mode FET.

One of the key advantages of the SI4946CDY-T1-GE3 is its high switching frequency, which allows it to operate at higher frequencies than most FET arrays, such as up to 12.5MHz. It is also able to efficiently control a large load current of up to 28A. The device features a low gate leakage current of less than 1uA, reducing power consumption in applications that require high-current switching. Its on-resistance (RDS(ON)) is also low, which helps reduce power loss by reducing the voltage drop during operation.

The SI4946CDY-T1-GE3\'s MOSFET technology offers excellent switching characteristics and low power consumption when compared to other types of power management FETs. Its high-speed switching capabilities make it an ideal device for applications that require fast switching, such as in power supplies. Its low on-resistance reduces power loss and helps improve efficiency, making it an excellent choice for applications where low power consumption is a priority. The device is also very reliable and its low leakage current helps extend the lifetime of the system.

The SI4946CDY-T1-GE3 is an excellent choice for designers who require a high-performance, low-power FET array in their power management applications. Its high-speed switching capabilities, low gate leakage current, and low on-resistance make it a great choice for systems that require reliable and efficient power management solutions. With its array of features, the SI4946CDY-T1-GE3 is an excellent addition to any power management application.

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