SI4966DY-T1-E3 Discrete Semiconductor Products

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The SI4966DY-T1-E3 are advanced high speed power MOSFET arrays designed for applications that demand better performance, faster switching speeds, and higher levels of robustness. These arrays are designed and manufactured using a proprietary process which yields ultra high speed performance and improved noise immunity.

One of the primary benefits of using MOSFET arrays is the ability to achieve faster switching speeds than traditional discrete MOSFETs and also easier and more cost-effective design complexity. The array construction results in an improved power density and a product with increased reliability.

The SI4966DY-T1-E3 is ideally suited for use in applications such as motor control, high power switching, and high-speed logic control, automotive, audio/video control and power switching applications. The SI4966DY-T1-E3 also has excellent noise immunity and drive capability.

The SI4966DY-T1-E3 works on the principle of insulated-gate field-effect transistor (IGFET), also known as a MOSFET. The device operates by depletion of mobile charge carriers (electrons or holes) inside a region of the device between anode and gate contacts. An IGFET is made up of two terminals (drain and gate) which are insulated from each other with a dielectric, and a third terminal (source).

The SI4966DY-T1-E3 utilizes a vertical double diffusion structure, or trench style, gate capacitance which provides an improved signal bandwidth and improved noise immunity compared to traditional planar devices. The effect of this improved signal performance is increased signal integrity and improved operational performance.

The SI4966DY-T1-E3 has several configuration options and packages such as leaded, surface mount, and through hole. This makes it a perfect choice for many applications, both in terms of performance and cost. Other options include a low RDS (ON) Schottky diode which further adds to the performance of the device.

In operation, the SI4966DY-T1-E3 is driven using gate voltages ranging from 3.3 to 5V. The device can be driven up to 20V for short duration events and can handle up to 100V for standard operation. This makes the device ideal for applications that require higher voltages, or require fast switching speeds.

The SI4966DY-T1-E3 is also available in a variety of custom packages and pin configurations to better accommodate a specific application’s density and electrical requirements. This flexibility makes it an ideal choice for many applications that require higher power densities or specialized pin configurations.

The SI4966DY-T1-E3 is an advanced, high-speed power MOSFET array designed to optimize performance and reliability. The use of a vertical double diffusion structure gate capacitance delivers superior signal bandwidth and increased noise immunity compared to traditional planar devices, making the SI4966DY-T1-E3 a perfect choice for many applications demanding improved performance and reliability.

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