SI4925BDY-T1-E3

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SI4925BDY-T1-E3 is a Fairchild Semiconductor, N-Channel MOSFET array, that has 3 controlled channels. This transistors array is a part of the Seme L Factor family, which is designed to provide low external component count, fast switching performance and excellent in-system board level performance. This transistor array is used in power switching applications including power supplies, motor drives, and logic level shift circuits. It is suitable for use in battery-powered applications, as well as in environments where operating frequencies are low.

SI4925BDY-T1-E3 has a maximum peak drain current rating of 1.5A and maximum drain-source voltage rating of 15V. It is equipped with a logic-level threshold gate that operates from a single supply voltage of 0 to 15V. This transistors array also has an output impedance of 0.2 Ω (typical). This ensures that it operates reliably without generating too much electrical noise.

This transistor array is constructed with an N-Channel MOSFET technology, which enables quick gate switching times, while reducing quiescent current. This technology also allows the transistor array to operate with low junction-to-ambient thermal resistance, which helps to reduce abnormalities caused by heat. Additionally, this transistor array is designed with PowerPAD™, which is a low to no backside metal technology, providing excellent power dissipation, while reducing device size and lowering system risk.

The presence of PowerPAD technology coupled with multiple gate terminals, reduces the external component count of the system for a better performance. The majority of the gate terminals are no-connect. By activating those terminals with logic level control, it is possible to drive multiple gates together for a greater current input. This makes SI4925BDY-T1-E3 a cost-effective solution for applications that require fast switching and robust performance.

The presence of multiple overlap capacitors in the array reduces the power losses in the circuit. This is because the capacitors act as a low-pass filter and provide good frequency attenuation. The capacitors also help to reduce electrical noises generated by the circuit. The presence of the capacitors also helps to reduce the inductance of the circuit, allowing the transistor array to operate without high frequency ringing.

The logic-level threshold gate voltage, 0 V to 15 V, ensures that the transistor array provides reliable switching without generating too much heat or power consumption. This ensures that the transistor array will operate at an optimal level of performance, while reducing the risk of failing due to heat or power consumption.

The presence of low-power consumption, fast switching and excellent ESD protection features ensure that SI4925BDY-T1-E3 is a reliable device for multiple power switching applications. This transistor array is particularly suited for applications that require low external components, fast switching and excellent power dissipation.

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