SI4965DY-T1-GE3 Allicdata Electronics
Allicdata Part #:

SI4965DY-T1-GE3-ND

Manufacturer Part#:

SI4965DY-T1-GE3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 8V 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 8V 2W Surface Mou...
DataSheet: SI4965DY-T1-GE3 datasheetSI4965DY-T1-GE3 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The SI4965DY-T1-GE3 is a semiconductor device with a broad set of applications and a wide variety of functions. It is classified as a Transistors - FETs, MOSFETs - Arrays system and is a type of Field Effect Transistor (FET). It is a four-gate design which translates to its having double the level of integration that is found in some other FET designs. This allows for a greater level of control in terms of what functions the SI4965DY-T1-GE3 can be used for and in what applications.

In terms of its applications, the SI4965DY-T1-GE3 is frequently used in the design and development of low noise amplifiers, power supply lines, motor control circuits, RF signal amplification and more. Its versatility means it can be used in any environment where high-quality power output is required. It has been tested and proven to be reliable and durable in its range of applications, with such performance expected to remain consistent even when dealing with high temperature environments.

On the subject of its working principle, the SI4965DY-T1-GE3 works like many other FETs. Its four gates enable it to be used as both a voltage regulator and an amplifier, depending on the circuit. As a regulator, it is able to achieve a low voltage of around 1.8 V, and as an amplifier, it can achieve an even higher voltage. The maximum power output is 24 W, making it ideal for situations where a large amount of power is needed.

The SI4965DY-T1-GE3 is a high-performance device which is highly reliable and offers many benefits to an engineer or designer. It is a robust, easily-integrated design which allows for manageable and achievable power output. Unlike other FETs, it is able to maintain its performance in extreme temperatures and will continue to perform even when exposed to humidity levels of up to 50%.

In terms of its availability, the SI4965DY-T1-GE3 is offered by many trusted semiconductor providers, such as Digi-Key, Arrow Electronics and Mouser Electronics. These leading suppliers also offer full technical support, troubleshooting assistance, and design help to ensure that your product meets your requirements and can be integrated into your particular application.

The SI4965DY-T1-GE3 is a versatile and efficient choice for a wide range of applications and its ability to maintain optimal performance in different environments makes it a great choice for even the most demanding requirements. With easy integration and dependable performance, this is one FET semiconductor which is sure to bring excellent results when used in any application.

The specific data is subject to PDF, and the above content is for reference

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