
Allicdata Part #: | SI4943BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI4943BDY-T1-E3 |
Price: | $ 0.72 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2P-CH 20V 6.3A 8-SOIC |
More Detail: | Mosfet Array 2 P-Channel (Dual) 20V 6.3A 1.1W Surf... |
DataSheet: | ![]() |
Quantity: | 5000 |
1 +: | $ 0.72000 |
10 +: | $ 0.69840 |
100 +: | $ 0.68400 |
1000 +: | $ 0.66960 |
10000 +: | $ 0.64800 |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Base Part Number: | SI4943 |
Supplier Device Package: | 8-SO |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power - Max: | 1.1W |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Gate Charge (Qg) (Max) @ Vgs: | 25nC @ 5V |
Series: | TrenchFET® |
Rds On (Max) @ Id, Vgs: | 19 mOhm @ 8.4A, 10V |
Current - Continuous Drain (Id) @ 25°C: | 6.3A |
Drain to Source Voltage (Vdss): | 20V |
FET Feature: | Logic Level Gate |
FET Type: | 2 P-Channel (Dual) |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The SI4943BDY-T1-E3 is a N-Channel MOSFET array, part of a large family of products made by Vishay, a leading manufacturer of discrete semiconductor components. Integrating two power MOSFETs, this device is designed to be used in applications that require low on-resistance and high current capabilities. It is also characterized by its low voltage operation, improved power handling capability, and ESD protection. This makes the SI4943BDY-T1-E3 suitable for use in a wide range of power management applications, especially in automotive and portable electronics.
When used in an application, the SI4943BDY-T1-E3 uses its two integrated MOSFETs to control power delivery. The gate of each MOSFET is connected to a separate control signal, while the drain and source are connected to the power and ground, respectively. The on-resistance of the MOSFETs depends on the voltage applied to the gate, and the current is limited only by the overall circuit resistance. The N-channel MOSFETs in the array have a low on-resistance, which is why they are so often used in power management applications.
In terms of its electrical characteristics, the SI4943BDY-T1-E3 has a very low threshold voltage of 1.2V, and an on-resistance of just 0.13ohm. Its maximum gate-source voltage is -4V, so it can be used with a wide range of signal levels. It also has an integrated electrostatic discharge (ESD) protection circuit, which protects against static discharge events up to 2kV HBM. The unit also features built-in overcurrent and overtemperature protection, and is available in an 8-pin DIP package.
Applications that benefit from the use of the SI4943BDY-T1-E3 include battery management, motor controls, solar inverters, industrial power converters, adapters, and various other kinds of power conditioning and power switching circuits. It can also be used to switch power in automotive applications, with the integrated ESD protection making it well suited for use in environments with the presence of static electricity. It can also be used with logic chips, as it is compatible with TTL, LVTTL, and other logic control signals.
Overall, the SI4943BDY-T1-E3 is a versatile N-Channel MOSFET array that is well suited for use in a variety of power management applications. Its low on-resistance, low threshold voltage, and integrated ESD protection make it an ideal choice for applications requiring high current capabilities and protection against static discharge. It is a reliable and cost-effective choice for many different types of applications, including automotive and portable electronics.
The specific data is subject to PDF, and the above content is for reference
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