SI4967DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4967DY-T1-E3-ND

Manufacturer Part#:

SI4967DY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 12V 8SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 12V 2W Surface Mo...
DataSheet: SI4967DY-T1-E3 datasheetSI4967DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: TrenchFET®
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: --
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.5A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: --
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO
Description

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The SI4967DY-T1-E3 is a MOSFET array, which is a type of transistor. MOSFET array transistors combine multiple MOSFET transistors in one package, allowing them to be applied in various applications requiring higher integration and a smaller form factor.

The SI4967DY-T1-E3 is a three-terminal MOSFET array providing the benefits of higher integration and reduced size. It provides low-voltage, high-current applications such as motor control and power management, reducing total power consumption.

The SI4967DY-T1-E3 also supports low voltage operation, making it well-suited for use in applications where low voltage is required. Its low voltage operation allows for more efficient operation, increased power output and a longer device lifetime.

The SI4967DY-T1-E3 is a versatile MOSFET array, providing multiple benefits for its users such as reduced package size and improved integration. In addition, its low voltage operation ensures energy efficiency and reliability.

The SI4967DY-T1-E3 is used in various applications requiring higher integration and a smaller form factor, such as motor control, power management, and system-level board design. Its low-voltage operation allows it to provide optimal power output, allowing for improved efficiency and reliability.

The SI4967DY-T1-E3 has a simple working principle which involves the transfer of charge from the gate terminal to the drain terminal. When the voltage is applied to the gate terminal, some of the charge located on the gate is transferred to the drain terminal. This transfer of charge causes the current between the drain and source terminals to flow, thus switching the transistor on.

The SI4967DY-T1-E3 is capable of operating at a range of voltages, enabling it to support various applications. When switched on, the charge transfer allows current to flow between the drain and source terminals. This current is used to transfer electrical energy. The output voltage remains consistent as long as the gate voltage remains stable.

The SI4967DY-T1-E3 helps reduce power consumption and is able to reduce total power consumption in motor control and power management applications. Its low voltage operation ensures the most efficient and reliable performance. Additionally, its small form factor allows it to be applied in various space-constrained applications.

In conclusion, the SI4967DY-T1-E3 is a versatile MOSFET array which offers users a reduction in package size and improved integration. It is well-suited for applications requiring higher integration, a smaller form factor, and low-voltage operation. Its simple working principle involves the transfer of charge, which allows the transistor to be switched on, and enables the current to flow between the drain and source terminals. This transfer of current helps reduce power consumption and optimize the performance of various applications.

The specific data is subject to PDF, and the above content is for reference

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