SI4963BDY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI4963BDY-T1-E3TR-ND

Manufacturer Part#:

SI4963BDY-T1-E3

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Vishay Siliconix
Short Description: MOSFET 2P-CH 20V 4.9A 8-SOIC
More Detail: Mosfet Array 2 P-Channel (Dual) 20V 4.9A 1.1W Surf...
DataSheet: SI4963BDY-T1-E3 datasheetSI4963BDY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Base Part Number: SI4963
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 1.1W
Input Capacitance (Ciss) (Max) @ Vds: --
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 4.5V
Series: --
Rds On (Max) @ Id, Vgs: 32 mOhm @ 6.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Drain to Source Voltage (Vdss): 20V
FET Feature: Logic Level Gate
FET Type: 2 P-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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SI4963BDY-T1-E3 is a high-performance, single-pole, eight-throw (SP8T) switch intended for high-frequency switching, signal routing, and signal distribution functions at frequencies up to 1 GHz. It is designed to provide low loss, low port-to-port isolation, and high off-isolation over a wide range of applications. This switch is available in a small 4.0 x 4.0 mm package and is suitable for a wide variety of applications.

The SI4963BDY-T1-E3 is a devices suitable for switching and routing of a variety of radio, mobile, radio-frequency (RF) and microwave signals. It is a field-effect transistor (FET) array that combines high reliability and low power consumption with an excellent signal-handling capacity. This array allows the signals to be routed through different paths with the least amount of loss. Moreover, the SI4963BDY-T1-E3 offers good isolation between ports so that the adjacent ports will not be affected by the signals passing through them.

The SI4963BDY-T1-E3 has an on-resistance of 14 Ohms and a voltage rating of 10V. It is also capable of handling high frequencies up to 1 GHz. The package has eight pairs of RF inputs and outputs, making it suitable for signal routing and signal distribution applications. The on-chip logic provides control of the input/output signal paths. The device uses logic-level control signals to enable the signal routing and signal distribution.

The working principle of the SI4963BDY-T1-E3 is based on two transistors connected in series to make a single-pole, eight-throw (SP8T) switch. The two transistors are used to route the signal from one port to another when required. The first transistor acts as a controller, while the second acts as a director or a switch. When the first transistor is turned on, it will draw a current from the control terminal and will enable the second transistor to conduct and allow the signal to pass through. When the first transistor is turned off, the second transistor will block the signal from passing through, allowing the signal to be routed to another port.

The SI4963BDY-T1-E3 offers a variety of applications, including cellular base station applications, radiated immunity tests, EMC tests, signal routing, and signal distribution. Its design also allows it to be used in a variety of high-frequency switching applications. The low on-resistance, low port-to-port isolation, and high off-isolation make it suitable for use in distributed antenna systems and satellite communication systems.

The high-performance, low power, and excellent signal-handling capacity of the SI4963BDY-T1-E3 makes it an ideal choice for applications that require a reliable and cost-effective solution to route and distribute signals. This device is also suitable for the most demanding high-frequency switching applications, such as Cellular Base Station, Radiated Immunity Test, EMC Test, and Signal Routing. This device is available in a very small package, making it suitable for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference

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