SI4936BDY-T1-E3 Discrete Semiconductor Products |
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Allicdata Part #: | SI4936BDY-T1-E3TR-ND |
Manufacturer Part#: |
SI4936BDY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 30V 6.9A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 30V 6.9A 2.8W Surf... |
DataSheet: | SI4936BDY-T1-E3 Datasheet/PDF |
Quantity: | 15000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 30V |
Current - Continuous Drain (Id) @ 25°C: | 6.9A |
Rds On (Max) @ Id, Vgs: | 35 mOhm @ 5.9A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 15nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 530pF @ 15V |
Power - Max: | 2.8W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI4936 |
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The SI4936BDY-T1-E3 is a type of compound semiconductor used in a variety of applications. This particular device is an N-channel Enhancement-mode Source/Gate/Drain vertical MOSFET array. It is composed of an internal integrated circuit (IC) of 5 parallel n-channel enhancement-mode FETs with a common source terminal.The SI4936BDY-T1-E3 has a number of useful properties that makes it an ideal choice for many applications. Its very low on-resistance and its very low input capacitance make it well suited for high frequency switching applications, such as analog and digital clock networks. Its large drain-source breakdown voltage and its high peak power dissipation make it a good choice for high voltage power management, such as DC-DC converters.The SI4936BDY-T1-E3 is mainly used as an amplifier in electrical circuits, and its working principle is very simple. It works by allowing current flow through the device when a certain level of input is applied. The input voltage is applied to the gate of the device and the output voltage is measured across the drain and source terminals. When the input voltage is low, the internal FETs of the device are off and no current flows. When the input voltage is high, the internal FETs turn on, allowing current flow and creating an output voltage.The SI4936BDY-T1-E3 is a versatile transistors array and makes it a very useful part for many applications. As well as amplifiers, it can be used for switching, power management, and other applications requiring low power and high-frequency operation. Thanks to its low on-resistance, low input capacitance, and its high peak power dissipation, it performs very well in these applications.In summary, the SI4936BDY-T1-E3 is a type of compound semiconductor used in a variety of applications. It is an N-channel Enhancement-mode Source/Gate/Drain vertical MOSFET array, composed of an internal integrated circuit of five parallel n-channel enhancement-mode FETs with a common source terminal. It is mainly used as an amplifier in electrical circuits and it works by allowing current flow through the device when a certain level of input is applied. It possesses a number of useful properties that makes it an ideal choice for many applications, such as high frequency switching, power management, and other applications requiring low power and high-frequency operation.
The specific data is subject to PDF, and the above content is for reference
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